AAT8113 20v p-channel power mosfet preliminary information 8113.2003.08.0.62 1 general description the AAT8113 low threshold 20v, p-channel mos- fet is a member of analogictech?'s trenchdmos? product family. using an ultra-high density proprietary trenchdmos technology the AAT8113 is designed for use as a load switch in battery powered applications and protection in bat- tery packs. applications ? battery packs ? battery-powered portable equipment features ?v ds(max) = -20v ?i d(max) 1 = -10a @ 25c ? low r ds(on) : ? 14 m ? @ v gs = -4.5v ? 24 m ? @ v gs = -2.5v sop-8l package dddd sssg top view 1234 8765 absolute maximum ratings (t a =25c unless otherwise noted) thermal characteristics symbol description value units r ja typical junction-to-ambient steady state 1 75 r ja2 maximum junction-to-ambient t<10 seconds 1 50 c/w r jf typical junction-to-foot 1 23 symbol description value units v ds drain-source voltage -20 v v gs gate-source voltage 12 i d continuous drain current @ t j =150c 1 t a = 25c 10 t a = 70c 8 a i dm pulsed drain current 2 48 i s continuous source current (source-drain diode) 1 -1.8 p d maximum power dissipation 1 t a = 25c 2.5 w t a = 70c 1.6 t j , t stg operating junction and storage temperature range -55 to 150 c
AAT8113 20v p-channel power mosfet 2 8113.2003.08.0.62 electrical characteristics (t j =25c unless otherwise noted) note 1: based on thermal dissipation from junction to ambient while mounted on a 1" x 1" pcb with optimized layout. a 10 secon d pulse on a 1" x 1" pcb approximates testing a device mounted on a large multi-layer pcb as in most applications. r jf + r fa = r ja where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. r jf is guaranteed by design, however r ca is determined by the pcb design. actual maximum continuous current is limited by the application's design. note 2: pulse test: pulse width = 300 s note 3: guaranteed by design. not subject to production testing. symbol description conditions min typ max units dc characteristics bv dss drain-source breakdown voltage v gs =0v, i d =-250a -20 v r ds(on) drain-source on-resistance 2 v gs =-4.5v, i d =-10a 11 14 m ? v gs =-2.5v, i d =-8a 18 24 i d(on) on-state drain current 2 v gs =-4.5v, v ds =5v (pulsed) -48 a v gs(th) gate threshold voltage v gs =v ds , i d =-250a -0.6 v i gss gate-body leakage current v gs =12v, v ds =0v 100 na i dss drain source leakage current v gs =0v, v ds =-20v -1 a v gs =0v, v ds =-16v, t j =70c 3 -5 g fs forward transconductance 2 v ds =-5v, i d =-10a 31 s dynamic characteristics 3 q g total gate charge v ds =-10v, r d =1.0 ? , v gs =-4.5v 36 q gs gate-source charge v ds =-10v, r d =1.0 ? , v gs =-4.5v 5 nc q gd gate-drain charge v ds =-10v, r d =1.0 ? , v gs =-4.5v 14.5 t d(on) turn-on delay v ds =-10v, r d =1.0 ? , v gs =-4.5v, r g =6 ? 30 t r turn-on rise time v ds =-10v, r d =1.0 ? , v gs =-4.5v, r g =6 ? 76 ns t d(off) turn-off delay v ds =-10v, r d =1.0 ? , v gs =-4.5v, r g =6 ? 94 t f turn-off fall time v ds =-10v, r d =1.0 ? , v gs =-4.5v, r g =6 ? 88 source-drain diode characteristics v sd source-drain forward voltage 2 v gs =0, i s =-10a -1.2 v i s continuous diode current 1 -1.8 a
typical characteristics threshold voltage -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 t j ( c) v gs(th) variance (v) i d = 250 a on-resistance vs. junction temperature 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j ( c) normalized r ds(on) (m ? ) v gs = -4.5v i d = -10a on-resistance vs. gate to source voltage 0 0.01 0.02 0.03 0.04 0.05 0.06 0 12345 v gs (v) r ds(on) ( ? ) on-resistance vs. drain current 0 0.01 0.02 0.03 0.04 0.05 012243648 i d (a) r ds(on) ( ? ? ) v gs = 4.5v v gs = 2.5v transfer characteristics 0 12 24 36 48 0123 4 v gs (v) i d (a) 25 c 125 c -55 c output characteristics 0 12 24 36 48 0123 v ds (v) i ds (a) 4.5v 5v 2v 1.5v 2.5v 3.5v 3v 4v AAT8113 20v p-channel power mosfet 8113.2003.08.0.62 3
AAT8113 20v p-channel power mosfet 4 8113.2003.08.0.62 typical characteristics capacitance 0 1000 2000 3000 4000 0 5 10 15 20 v ds (v) capacitance (pf) c iss c oss c rss source-drain diode forward voltage 0.1 10 1000 0 0.5 1 1.5 v sd (v) i s (a) t j = 150 c t j = 25 c gate charge 0 1 2 3 4 5 010203040 q g , charge (nc) v gs (v) i d = 10a v d = 10v
ordering information package information sop-8 all dimensions in millimeters. 0.175 0.075 6.00 0.20 3.90 0.10 1.55 0.20 1.27 bsc 0.42 0.09 8 4.90 0.10 4 4 45 0.375 0.125 0.235 0.045 0.825 0.445 package marking part number (tape and reel) sop-8 8113 AAT8113ias-t1 AAT8113 20v p-channel power mosfet 8113.2003.08.0.62 5
AAT8113 20v p-channel power mosfet 6 8113.2003.08.0.62 advanced analogic technologies, inc. 830 e. arques avenue, sunnyvale, ca 94085 phone (408) 737-4600 fax (408) 737-4611 analogictech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an analogictech pr oduct. no circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. analogictech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. analogictech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with analogictech?s standard warranty. testing and other quality control techniques are utilized to the extent analogictech deems necessary to support this warranty. specific tes ting of all parameters of each device is not necessarily performed.
|
