vishay tsus520. document number 81055 rev. 1.9, 06-may-04 vishay semiconductors www.vishay.com 1 94 8389 infrared emitting diode, 950 nm, gaas description tsus520. series are infrared emitting diodes in stan- dard gaas on gaas technology, molded in a clear, blue-grey tinted plastic package. the devices are spectrally matched to silicon photodiodes and pho- totransistors. features ? low cost emitter low forward voltage high radiant power and radiant intensity suitable for dc and high pulse current operation standard t-1? ( ? 5 mm) package angle of half intensity ? = 15 peak wavelength p = 950 nm high reliability good spectral matching to si photodetectors lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications infrared remote control and free air transmission sys- tems with low forward voltage and low cost require- ments in combination with pin photodiodes or phototransistors. absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test condition symbol value unit reverse voltage v r 5v forward current i f 150 ma peak forward current t p /t = 0.5, t p = 100 si fm 300 ma surge forward current t p = 100 si fsm 2.5 a power dissipation p v 210 mw junction temperature t j 100 c operating temperature range t amb - 55 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 sec, 2 mm from case t sd 260 c thermal resistance junction/ ambient r thja 375 k/w
www.vishay.com 2 document number 81055 rev. 1.9, 06-may-04 vishay tsus520. vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified type dedicated characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min typ. max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.3 1.7 v temp. coefficient of v f i f = 100 ma tk vf - 1.3 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 30 pf parameter test condition symbol min typ. max unit temp. coefficient of e i f = 20 ma tk e - 0.8 %/k angle of half intensity ? 15 deg peak wavelength i f = 100 ma p 950 nm spectral bandwidth i f = 100 ma ? 50 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns i f = 1.5 a t r 400 ns fall time i f = 100 ma t f 800 ns i f = 1.5 a t f 400 ns virtual source diameter ? 3.8 mm parameter test condition part symbol min typ. max unit forward voltage i f = 1.5 a, t p = 100 s TSUS5200 v f 2.2 3.4 v tsus5201 v f 2.2 3.4 v tsus5202 v f 2.2 2.7 v radiant intensity i f = 100 ma, t p = 20 ms TSUS5200 i e 10 20 50 mw/sr tsus5201 i e 15 25 50 mw/sr tsus5202 i e 20 30 50 mw/sr i f = 1.5 a, t p = 100 s TSUS5200 i e 95 180 mw/sr tsus5201 i e 120 230 mw/sr tsus5202 i e 170 280 mw/sr radiant power i f = 100 ma, t p = 20 ms TSUS5200 e 13 mw tsus5201 e 14 mw tsus5202 e 15 mw
vishay tsus520. document number 81055 rev. 1.9, 06-may-04 vishay semiconductors www.vishay.com 3 typical characteristics (tamb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. pulse forward current vs. pulse duration 0 50 100 150 200 250 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 94 7957 r thja 20 40 60 80 100 0 020406080 0 50 100 150 200 250 i C forward current ( ma) f t amb C ambient temperature ( c ) 100 94 7988 r thja t p C pulse duration ( ms ) 94 7989 10 0 10 1 10 1 10 C1 10 C1 10 0 10 2 10 C2 i C forward current (a) f t p /t=0.01 i fsm = 2.5 a ( single pulse ) 0.05 0.1 0.5 1.0 figure 4. forward current vs. forward voltage figure 5. relative forward voltage vs. ambient temperature figure 6. radiant intensity vs. forward current 94 7996 10 1 10 0 10 2 10 3 10 4 10 -1 i - forward current ( ma ) f 4 3 2 1 0 v f - forward voltag e(v) 0.7 0.8 0.9 1.0 1.1 1.2 v - relative forward voltage frel 94 7990 i f =10ma t amb - ambient temperature ( c) 100 80 60 40 20 0 i f C forward current ( ma ) 94 7991 10 3 10 1 10 2 10 4 10 0 1 10 100 1000 i C radiant intensity ( mw/sr ) e TSUS5200 tsus 5202 tsus 5201
www.vishay.com 4 document number 81055 rev. 1.9, 06-may-04 vishay tsus520. vishay semiconductors figure 7. radiant power vs. forward current figure 8. rel. radiant intensity/power vs. ambient temperature figure 9. relative radiant power vs. wavelength C radiant power ( mw) e i f C forward current ( ma ) 94 7992 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 TSUS5200 tsus 5202 -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i; e rel e rel 140 94 7993 i f =20ma t amb - ambient temperature ( c) 900 950 0 0.25 0.5 0.75 1.0 1.25 - wavelength ( nm ) 1000 94 7994 - relative radiant power i f = 100 ma e rel 0.4 0.2 0 0.2 0.4 i C relative radiant intensity e rel 0.6 94 7995 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0
vishay tsus520. document number 81055 rev. 1.9, 06-may-04 vishay semiconductors www.vishay.com 5 package dimensions in mm 95 10916
www.vishay.com 6 document number 81055 rev. 1.9, 06-may-04 vishay tsus520. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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