aug. 1999 pin configuration mitsubishi semiconductor m54566p/fp 7-unit 400ma darlington transistor array description m54566p and m54566fp are seven-circuit collector-current- synchronized darlington transistor arrays. the circuits are made of pnp and npn transistors. both the semiconductor integrated circuits perform high-current driving with ex- tremely low input-current supply. features high breakdown voltage (bv ceo 3 50v) high-current driving (ic(max) = 400ma) active l-level input wide operating temperature range (ta = C20 to +75 c) application interfaces between microcomputers and high-voltage, high- current drive systems, drives of relays and printers, and mos-bipolar logic ic interfaces function the m54566 is produced by adding pnp transistors to m54222 inputs. seven circuits having active l-level inputs are provided. resistance of 8k w is provided between each input and pnp transistor base. the input emitters are connected to v cc pin (pin 9). output transistor emitters are all connected to the gnd pin (pin 8). collector current is 400ma maximum. collector-emitter sup- ply voltage is 50v maximum. these ics are optimal for drivers that are driven with n-mos ic output and absorb collector current. the m54566fp is enclosed in a molded small flat package, enabling space-saving design. circuit diagram 10 C0.5 ~ +50 400 C0.5 ~ v cc 1.47(p)/1.00(fp) C20 ~ +75 C55 ~ +125 v v ma v w c c 20k 2.7k 7.2k 3k 8k gnd v cc input output the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the seven circuits share the v cc and gnd. absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) ratings unit symbol parameter conditions supply voltage collector-emitter voltage collector current input voltage power dissipation operating temperature storage temperature output, h current per circuit output, l ta = 25 c, when mounted on board v cc v ceo i c v i p d t opr t stg 1 in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? v cc gnd 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? ? ? ? ? ? y ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? 16p4(p) package type 16p2n-a(fp) input output
aug. 1999 mitsubishi semiconductor m54566p/fp 7-unit 400ma darlington transistor array recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) v ma ma v (br) ceo i i i cc h fe v v ce (sat) v v v v 5 8 50 v cc v cc C3 i c 0 0 ma 4 0 v cc C0.2 0 350 200 2.2 1.6 C0.58 3.0 i ceo = 100 m a v i = v cc C3v, i c = 350ma v i = v cc C3v, i c = 200ma v i = v cc C3.5v v cc = 5v, v i = v cc C3.5v v ce = 4v, v cc = 5v, i c = 350ma, ta = 25 c symbol unit parameter test conditions limits min typ + max 50 2000 1.1 0.9 C0.38 1.4 10000 + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. ns ns t on t off 95 2500 symbol unit parameter test conditions limits min typ max timing diagram note 1 test circuit v cc v o v ih v il parameter limits symbol unit supply voltage output voltage min typ max h input voltage l input voltage v cc = 5v, duty cycle p : no more than 30% fp : no more than 20% v cc = 5v, duty cycle p : no more than 10% fp : no more than 6% collector current (current per 1 cir- cuit when 7 circuits are coming on si- multaneously) collector-emitter breakdown voltage input current supply current (one circuit coming on) dc amplification factor collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) switching characteristics (unless otherwise noted, ta = 25 c) c l = 15pf (note 1) turn-on time turn-off time pg 50 w c l r l v cc v o input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v i = 1 to 4v (2) input-output conditions : r l = 30 w , v o = 10v, v cc = 4v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device ton 50% 50% 50% 50% toff input output
aug. 1999 mitsubishi semiconductor m54566p/fp 7-unit 400ma darlington transistor array typical characteristics duty-cycle-collector characteristics (m54566p) duty cycle (%) a ? ? ? ? collector current ic (ma) 0 200 100 300 400 500 0 20 40 60 80 100 ? ? ? duty cycle (%) ? a collector current ic (ma) duty-cycle-collector characteristics (m54566p) 0 200 100 300 400 500 0 20 40 60 80 100 ? ? ? duty cycle (%) a ? collector current ic (ma) duty-cycle-collector characteristics (m54566fp) 0 200 100 300 400 500 0 20 40 60 80 100 duty-cycle-collector characteristics (m54566fp) duty cycle (%) a ? ? ? ? collector current ic (ma) 0 200 100 300 400 500 0 20 40 60 80 100 thermal derating factor characteristics ambient temperature ta (?) m54566fp m54566p power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) 0 200 100 300 400 0 0.5 1.0 1.5 2.0 collector current ic (ma) v cc = 4v v i = 1v ta = 75? ta = 25? ta = ?0? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 25? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 75? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 25? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 75?
aug. 1999 mitsubishi semiconductor m54566p/fp 7-unit 400ma darlington transistor array input characteristics supply voltage-input voltage v cc v i (v) 0 ?.4 ?.2 ?.6 ?.8 ?.0 0 12345 input current i i (ma) vcc = 8v ta = 75? ta = 25? ta = ?0? grounded emitter transfer characteristics supply voltage-input voltage v cc v i (v) 0 200 100 300 400 0 0.4 0.8 1.2 1.6 collector current ic (ma) vcc = 4v v ce = 4v ta = 75? ta = 25? ta = ?0? supply current characteristics supply voltage v cc (v) 0 2 1 3 4 5 0 246810 supply current icc (ma) v i = 0v ta = 75? ta = 25? ta = ?0? dc amplification factor collector current characteristics collector current ic (ma) 10 1 10 3 vcc = 4v v ce = 4v ta = 25? ta = 75? ta = ?0? 5 3 2 7 5 3 2 7 10 4 10 3 10 2 23 57 23 57 10 2 dc amplification factor h fe
|
