rev.1.00, apr.22.20 05, page 1 of 7 rjk1525dpj, RJK1525DPE, rjk1525dpf silicon n channel mos fet high speed power switching rej03g0623-0100 rev.1.00 apr.22,2005 features ? low on-resistance ? low leakage current ? high speed switching outline d g s 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 rjk1525dpj RJK1525DPE 1 2 3 4 rjk1525dpf renesas package code: prss0004ae-c (package name ldpak(s)-(2)) renesas package code: prss0004ae-b (package name ldpak(s)-(1)) renesas package code: prss0004ae-a (package name ldpak(l)) www.datasheet.co.kr datasheet pdf - http://www..net/
rjk1525dpj, RJK1525DPE, rjk1525dpf rev.1.00, apr.22.20 05, page 2 of 7 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 150 v gate to source voltage v gss 30 v drain current i d 25 a drain peak current i d (pulse) note1 50 a body-drain diode reverse drain current i dr 25 a body-drain diode reverse drain peak current i dr (pulse) note1 50 a avalanche current i ap note3 17 a avalanche energy e ar note3 21.6 mj channel dissipation pch note2 75 w channel to case thermal impedance ch-c 1.67 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. stch = 25 c, tch 150 c electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 150 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 150 v, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3.0 ? 4.5 v v ds = 10 v, i d = 1 ma forward transfer admittance |yfs| 7 12 ? s i d = 12.5 a, v ds = 10 v note4 static drain to source on state resistance r ds(on) ? 0.093 0.110 ? i d = 12.5 a, v gs = 10 v note4 input capacitance ciss ? 680 ? pf output capacitance coss ? 150 ? pf reverse transfer capacitance crss ? 22 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time td(on) ? 22 ? ns rise time tr ? 110 ? ns turn-off delay time td(off) ? 45 ? ns fall time tf ? 12 ? ns i d = 12.5 a v gs = 10 v r l = 6 ? rg = 10 ? total gate charge qg ? 18 ? nc gate to source charge qgs ? 4.5 ? nc gate to drain charge qgd ? 9 ? nc v dd = 120 v v gs = 10 v i d = 25 a body-drain diode forward voltage v df ? 0.95 1.50 v i f = 25 a, v gs = 0 note4 body-drain diode reverse recovery time trr ? 100 ? ns body-drain diode reverse recovery charge qrr ? 0.4 ? c i f = 25 a, v gs = 0 dif/dt = 100 a/ s notes: 4. pulse test www.datasheet.co.kr datasheet pdf - http://www..net/
rjk1525dpj, RJK1525DPE, rjk1525dpf rev.1.00, apr.22.20 05, page 3 of 7 main characteristics 100 75 50 25 0 50 100 150 200 20 16 12 8 4 0 4 8 12 16 20 20 16 12 8 4 0 2468 10 v gs = 5 v tc = 75 c 25 c ? 25 c channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test 5.5 v 6 4 2 0 48 12 16 20 1 30 100 3 10 300 1000 0.2 0.1 0.05 1 0.5 0.02 0.01 gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) drain current i d (a) drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. drain current 8 i d = 25 a 12.5 a 8.5 a pulse test v gs = 10 v pulse test 6 v 300 100 30 10 3 1 13 10 30 300 1000 0.3 0.01 0.1 0.03 1000 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 100 ta = 25 c 100 s operation in this area is limited by r ds(on) 6.5 v 7 v dc operation (tc = 25 c) pw = 10 ms (1shot) 10 s 1 m s 10 v www.datasheet.co.kr datasheet pdf - http://www..net/
rjk1525dpj, RJK1525DPE, rjk1525dpf rev.1.00, apr.22.20 05, page 4 of 7 0.5 0.4 0.3 0.2 0.1 ? 25 0 25 50 75 100 125 150 0 0.3 0.1 3 30 100 100 30 10 3 1 0.3 0.1 110 case temperature tc ( c) static drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) v gs = 10 v pulse test 1 3 10 30 100 300 1000 1000 200 500 100 20 50 10 2 5 1 0 50 100 150 30000 10000 100000 1000 3000 240 0 16 180 12 120 8 60 4 4 8 12 16 20 0 1000 100 1 10 0.1 0.3 1 3 10 30 100 300 100 30 10 v gs = 0 f = 1 mhz ciss coss crss i d = 25 a v ds v gs reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics drain current i d (a) switching time t (ns) switching characteristics di / dt = 100 a / s v gs = 0, ta = 25 c v dd = 120 v 60 v 30 v t d(on) t d(off) v gs = 10 v, v dd = 75 v pw = 5 s, duty < 1 % r g = 10 ? v dd = 30 v 60 v 120 v t r t f i d = 25 a v ds = 10 v pulse test 8.5 a 12.5 a tc = ? 25 c 25 c 75 c t r t f www.datasheet.co.kr datasheet pdf - http://www..net/
rjk1525dpj, RJK1525DPE, rjk1525dpf rev.1.00, apr.22.20 05, page 5 of 7 0 0.4 0.8 1.2 1.6 2.0 50 20 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) 5 4 3 2 1 -25 0 50 100 150 25 125 75 0 case temperature tc ( c) gate to source cutoff voltage vs. case temperature gate to source cutoff voltage v gs(off) (v) vin monitor d.u.t. vin 10 v r l v = 75 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 10 ? 90% 10% t f switching time test circuit waveform 10 30 40 0.3 0.1 0.03 0.003 0.001 0.01 3 1 10 100 1 m 10 m 100 m 1 10 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width v gs = 0 v 10 v pulse test 5 v v ds = 10 v i d = 10 ma 1 ma 0.1 ma tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch ? c(t) = s (t) ch ? c ch ? c = 1.67 c/w, tc = 25 c www.datasheet.co.kr datasheet pdf - http://www..net/
rjk1525dpj, RJK1525DPE, rjk1525dpf rev.1.00, apr.22.20 05, page 6 of 7 package dimensions ? rjk1525dpj 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ? 0.1 1.3 0.2 4.44 0.2 1.3 0.15 2.49 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ? 0.5 (1.4) 1.37 0.2 package name prss0004ae-a ldpak(l) / ldpak(l)v mass[typ.] 1.40g ? renesas code jeita package code unit: mm ? RJK1525DPE 10.2 0.3 1.37 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 sc-83 1.30g mass[typ.] ldpak(s)-(1) / ldpak(s)-(1)v prss0004ae-b renesas code jeita package code package name unit: mm www.datasheet.co.kr datasheet pdf - http://www..net/
rjk1525dpj, RJK1525DPE, rjk1525dpf rev.1.00, apr.22.20 05, page 7 of 7 ? rjk1525dpf ? 1.35g mass[typ.] ldpak(s)-(2) / ldpak(s)-(2)v prss0004ae-c renesas code jeita package code package name unit: mm 10.2 0.3 1.37 0.2 (2.3) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 5.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 ordering information part name quantity shipping container RJK1525DPE-le 1000 pcs taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product. www.datasheet.co.kr datasheet pdf - http://www..net/
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is al ways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating i n the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents in formation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or e rrors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technolo gy corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under cir cumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materia ls. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 2005. renesas technology corp., all rights reserved. printed in japan. colophon .2.0 www.datasheet.co.kr datasheet pdf - http://www..net/
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