Part Number Hot Search : 
2412E 06161 MAX85 1M250 C1GT0 HA13159 1J000 APTGT5
Product Description
Full Text Search
 

To Download K6A65D Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  tK6A65D 2009-04-09 1 toshiba field effect transistor silicon n channel mos type ( -mos ) tK6A65D switching regulator applications ? low drain-source on resistance: r ds (on) = 0.95 (typ.) ? high forward transfer admittance: ? y fs ? =4.0 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 650 v) ? enhancement-mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v dc (note 1) i d 6 drain current pulse (t = 1 ms) (note 1) i dp 24 a drain power dissipation (tc = 25c) p d 45 w single pulse avalanche energy (note 2) e as 281 mj avalanche current i ar 6 a repetitive avalanche energy (note 3) e ar 4.5 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods??) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 2.78 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: please use devices on conditions that the channel temperature is below 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 13.8 mh, r g = 25 , i ar = 6 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensit ive device. please handle with caution. unit: mm jedec ? jeita sc-67 toshiba 2-10u1b weight : 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source internal connection www.datasheet.co.kr datasheet pdf - http://www..net/
tK6A65D 2009-04-09 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 1 a drain cut-off current i dss v ds = 650 v, v gs = 0 v ? ? 10 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 650 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 3 a ? 0.95 1.11 forward transfer admittance ? y fs ? v ds = 10 v, i d = 3 a 1.0 4.0 ? s input capacitance c iss ? 1050 ? reverse transfer capacitance c rss ? 5 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 100 ? pf rise time t r ? 25 ? turn-on time t on ? 60 ? fall time t f ? 10 ? switching time turn-off time t off ? 75 ? ns total gate charge q g ? 20 ? gate-source charge q gs ? 13 ? gate-drain charge q gd v dd 400 v, v gs = 10 v, i d = 6 a ? 7 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 6 a pulse drain reverse current (note 1) i drp ? ? ? 24 a forward voltage (diode) v dsf i dr = 6 a, v gs = 0 v ? ? ?1.7 v reverse recovery time t rr ? 1300 ? ns reverse recovery charge q rr i dr = 6 a, v gs = 0 v, di dr /dt = 100 a/ s ? 10 ? c marking r l = 67 0 v 10 v v gs v dd 200 v i d = 3 a v out 50 duty 1%, t w = 10 s lot no. K6A65D part no. (or abbreviation code) note 4 note 4 : a line under a lot no. identifies the indication of product labels [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is directive 2002/95/e c of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain hazardous substances in elec trical and electronic equipment www.datasheet.co.kr datasheet pdf - http://www..net/
tK6A65D 2009-04-09 3 0.1 0.1 1 100 1 v gs = 10 v 10 10 0.1 100 0.1 1 25 100 tc = ? 55 c 100 10 10 1 0 6 8 10 0 3 4 8 12 16 20 6 i d = 1.5 a 4 2 10 0 0 2 4 6 8 2 10 tc = ? 55 c 25 100 4 6 8 6.5 10 8 6 4 0 0 20 40 50 v gs = 5 v 8 10 30 10 6.75 7 2 6.25 6 5.5 5 4 2 1 0 0 2 4 6 8 10 v gs = 5 v 5.5 5.75 6 8 10 6.25 3 r ds (on) ? i d v ds ? v gs i d ? v ds ? y fs ? ? i d i d ? v ds forward transfer admittance ? y fs ? (s) drain current i d (a) drain current i d (a) drain-source voltage v ds (v) drain-source voltage v ds (v) gate-source voltage v gs (v) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) i d ? v gs common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = 20 v pulse test common source tc = 25 pulse test common source v ds = 10 v pulse test common source tc = 25c pulse test drain current i d (a) drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) www.datasheet.co.kr datasheet pdf - http://www..net/
tK6A65D 2009-04-09 4 0 6 v dd = 100 v v ds v gs 400 200 18 24 500 400 300 200 100 0 20 16 12 8 4 0 30 12 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 1 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss 0 0.1 ? 0.3 10 ? 0.9 v gs = 0 v 1 3 ? 1.2 ? 1.5 ? 0.6 5 10,15 1 160 ? 40 0 40 80 120 ? 80 3 0 i d = 1.5 a 3 6 1.2 1.8 0.6 2.4 r ds (on) ? tc v th ? tc i dr ? v ds p d ? tc capacitance c (pf) drain power dissipation p d (w) drain-source on resistance r ds (on) ( ) drain reverse current i dr (a) gate threshold voltage v th (v) drain-source voltage v ds (v) drain-source voltage v ds (v) case temperature tc (c) drain-source voltage v ds (v) case temperature tc (c) total gate charge q g (nc) gate-source voltage v gs (v) common source v gs = 10 v pulse test common source tc = 25c pulse test common source v gs = 0 v f = 1 mhz tc = 25c common source v ds = 10 v i d = 1 ma pulse test common source i d = 6 a tc = 25c pulse test capacitance ? v ds dynamic input / output characteristics case temperature tc (c) 1 20 30 40 50 160 0 40 80 120 10 www.datasheet.co.kr datasheet pdf - http://www..net/
tK6A65D 2009-04-09 5 drain-source voltage v ds (v) 0.001 0.01 1 10 100 10 1000 100 100 s * 1 ms * 0.1 0.1 1 0.01 10 0.1 1 10 100 1m 10m 100m 1 10 t p dm t duty = t/t r th (ch-c) = 2.78 c/w duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 single pulse ?15 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 13.8 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as r th ? t w e as ? t ch normalized transient thermal impedance r th (t) /r th (ch-c) pulse width t w (s) safe operating area drain current i d (a) *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i d max (pulsed) * i d max (continuous) dc operation tc = 25c avalanche energy e as (mj) channel tempeature (initial) t ch (c) test circuit waveform 400 320 160 80 0 25 50 75 100 125 150 240 www.datasheet.co.kr datasheet pdf - http://www..net/
tK6A65D 2009-04-09 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) the instructions for the applicati on that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or app lications, including but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample app lication circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipm ent, equipment used for automobiles, trains , ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, us e, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear , chemical, or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regul ations. export and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applic able export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclus ion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations. www.datasheet.co.kr datasheet pdf - http://www..net/


▲Up To Search▲   

 
Price & Availability of K6A65D
Newark

Part # Manufacturer Description Price BuyNow  Qty.
TK6A65D(STA4,X,M)
72AK4550
Toshiba America Electronic Components Mosfet, N-Ch, 650V, 6A, Sc-67; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. Of Pins:3Pinsrohs Compliant: Yes |Toshiba TK6A65D(STA4,X, M) 10000: USD0.491
2500: USD0.508
1000: USD0.625
500: USD0.718
100: USD0.811
10: USD1.06
1: USD1.24
BuyNow
1432

DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
TK6A65D(STA4,Q,M)
TK6A65D(STA4QM)-ND
Toshiba America Electronic Components MOSFET N-CH 650V 6A TO220SIS 10000: USD0.78375
5000: USD0.78651
2000: USD0.81723
1000: USD0.86024
500: USD1.01386
100: USD1.1982
50: USD1.4562
1: USD1.81
BuyNow
23

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
TK6A65D(STA4QM)
TK6A65D(STA4,Q,M)
Toshiba America Electronic Components Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK6A65D(STA4,Q,M)) 5000: USD0.80256
500: USD0.82137
400: USD0.84645
300: USD0.86526
200: USD0.89034
100: USD0.93423
50: USD0.95931
BuyNow
0

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
TK6A65D(STA4,Q,M)
757-TK6A65DSTA4QM
Toshiba America Electronic Components MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm 1: USD1.81
10: USD1.46
100: USD1.23
250: USD1.1
500: USD1
1000: USD0.817
RFQ
0

TME

Part # Manufacturer Description Price BuyNow  Qty.
TK6A65D(STA4,Q,M)
TK6A65D
Toshiba America Electronic Components Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP 250: USD0.73
50: USD0.79
10: USD0.86
3: USD0.99
1: USD1.1
RFQ
0

Chip1Stop

Part # Manufacturer Description Price BuyNow  Qty.
TK6A65D(STA4,X,M)
C1S751200939299
Toshiba America Electronic Components MOSFET 50: USD0.334
10: USD0.343
5: USD0.359
BuyNow
50
TK6A65D(STA4,Q,M)
C1S751200830420
Toshiba America Electronic Components Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS 50: USD0.413
10: USD0.458
5: USD0.541
BuyNow
50

New Advantage Corporation

Part # Manufacturer Description Price BuyNow  Qty.
TK6A65D(STA4,Q,M)
Toshiba America Electronic Components 300: USD0.8548
29150: USD0.791
BuyNow
29150

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
TK6A65D(STA4,X,M)
Toshiba America Electronic Components RFQ
112
TK6A65D
MFG UPON REQUEST RFQ
560
TK6A65D(STA4,Q,M)
Toshiba America Electronic Components RFQ
56

South Electronics

Part # Manufacturer Description Price BuyNow  Qty.
TK6A65D(STA4,Q,M)
Toshiba America Electronic Components TK6A65D(STA4,Q,M) RFQ
0

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X