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forward voltage 1 10 0 0.2 0.4 0.6 0.8 1 D30SC4M tc=150 c [max] tc=25 c [max] pulse measurement per diode tc=150 c [typ] tc=25 c [typ] forward voltage v f [v] forward current i f [a]
100 1000 D30SC4M 0.1 1 10 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 reverse voltage v r [v] junction capacitance cj [pf] f=1mhz tc=25 c typ per diode junction capacitance
reverse current 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 D30SC4M tc=150 c [max] tc=150 c [typ] pulse measurement per diode tc=125 c [typ] tc=100 c [typ] tc=75 c [typ] reverse voltage v r [v] reverse current i r [ma]
0 10 20 30 40 50 0 10 20 30 40 50 D30SC4M 0.3 reverse power dissipation tj = 150 c sin 0.2 0.5 d=0.05 dc 0.1 0.8 0 t p v r t d=t p /t reverse voltage v r [v] reverse power dissipation p r [w]
0 t p i o t d=t p /t 0 5 10 15 20 25 30 0 10 20 30 40 50 D30SC4M 0.3 forward power dissipation tj = 150 c sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w]
0 t p i o t d=t p /t 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160 D30SC4M 0.3 derating curve v r = 20v sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r case temperature tc [ c] average rectified forward current i o [a]
peak surge forward capability 0 100 200 300 400 500 1 10 100 D30SC4M 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=125 c before surge current is applied
t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp 0 20 40 60 80 100 120 0 50 100 150 sbd repetitive surge reverse power derating curve junction temperature tj [ c] p rrsm derating [%]
0.1 1 10 1 10 100 sbd repetitive surge reverse power capability pulse width t p [ m s] p rrsm (t p ) / p rrsm (t p =10 m s) ratio t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp


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