features trenchfet power mosfet: 1.8-v rated ultra-low on-resistance applications load switch pa switch battery switch SI3493DV vishay siliconix new product document number: 71936 s-22122?rev. b, 25-nov-02 www.vishay.com 1 p-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.027 @ v gs = -4.5 v -7 -20 0.035 @ v gs = -2.5 v - 6.2 0.048 @ v gs = -1.8 v - 5.2 (4) s (3) g (1, 2, 5, 6) d p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds -20 gate-source voltage v gs 8 v a t a = 25 c -7 -5.3 continuous drain current (t j = 150 c) a t a = 85 c i d - 3.6 -3.9 pulsed drain current i dm -20 a continuous diode current (diode conduction) a i s -1.7 -0.9 t a = 25 c 2.0 1.1 maximum power dissipation a t a = 85 c p d 1.0 0.6 w operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 5 sec 45 62.5 maximum junction-to-ambient a steady state r thja 90 110 c/w maximum junction-to-foot (drain) steady state r thjf 25 30 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI3493DV vishay siliconix new product www.vishay.com 2 document number: 71936 s-22122 ? rev. b, 25-nov-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = -250 a -0.40 -1 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = -16 v, v gs = 0 v -1 zero gate voltage drain current i dss v ds = -16 v, v gs = 0 v, t j = 85 c -5 a on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -20 a v gs = -4.5 v, i d = -7 a 0.022 0.027 drain-source on-state resistance a r ds(on) v gs = -2.5 v, i d = -6.2 a 0.029 0.035 ds(on) v gs = -1.8 v, i d = -3 a 0.039 0.048 forward transconductance a g fs v ds = -5 v, i d = -7 a 25 s diode forward voltage a v sd i s = -1.7 a, v gs = 0 v -0.7 -1.2 v dynamic b total gate charge q g 21 32 gate-source charge q gs v ds = -10 v, v gs = -4.5 v, i d = -7 a 2.6 nc gate-drain charge q gd 6 turn-on delay time t d(on) 20 30 rise time t r v dd = -10 v, r l = 10 40 60 turn-off delay time t d(off) v dd = -10 v, r l = 10 i d -1 a, v gen = -4.5 v, r g = 6 125 190 ns fall time t f 85 130 source-drain reverse recovery time t rr i f = -1.7 a, di/dt = 100 a/ s 64 90 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 4 8 12 16 20 0.0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20 012345 v gs = 5 thru 2 v t c = 125 c -55 c 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 1 v 1.5 v
SI3493DV vishay siliconix new product document number: 71936 s-22122 ? rev. b, 25-nov-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - on-resistance ( r ds(on) ) 0 500 1000 1500 2000 2500 3000 048121620 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 0 4 8 12162024 0.00 0.02 0.04 0.06 0.08 0.10 048121620 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 10 v i d = 7 a i d - drain current (a) v gs = 4.5 v i d = 7 a v gs = 1.8 v v gs = 2.5 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.00 0.02 0.04 0.06 0.08 0.10 012345 i d = 7 a 20 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 4.5 v t j = 150 c t j = 25 c
SI3493DV vishay siliconix new product www.vishay.com 4 document number: 71936 s-22122 ? rev. b, 25-nov-02 typical characteristics (25 c unless noted) 0 24 40 8 16 power (w) single pulse power time (sec) 32 10 -3 10 -2 1 10 600 10 -1 10 -4 100 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 360 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 100 600 10 10 -1 10 -2 t a = 25 c safe operating area v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 0.1 100 - drain current (a) i d 1 t c = 25 c single pulse r ds(on) limited i dm limited bv dss limited i d(on) limited p(t) = 10 dc p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001
SI3493DV vishay siliconix new product document number: 71936 s-22122 ? rev. b, 25-nov-02 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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