http://www.belling.com.cn 3/28/2007 page 1/6 BLV730 n-channel enhancement mode power mosfet avalanche energy specified bv dss 400v fast switching r ds(on) 1.0 ? simple drive requirements i d 5.5a description this advanced high voltage mosfet is produced using bellings proprietary dmos technology. designed for high efficiency switch mode power supp ly . absolute maximum ratings ( t c =25 o c unless otherwise noted ) symbol parameter value units v ds drain-source voltage 400 v v gs gate-source voltage + 20 v continuous drain current 5.5 a i d continuous drain current ( t c =100 o c ) 3.5 a i dm drain current (pulsed) (note 1) 22 a power dissipation 74 w p d linear derating factor 0.59 w/ e as single pulsed avalanche energy (note2) 290 mj i ar avalanche current 5.5 a e ar repetitive avalanche energy 7.4 mj tj operating junction temperature range -55 to +15 0 o c t sdg storage temperature range -55 to +150 o c thermal characteristics symbol parameter value units r th j-c thermal resistance, junction to case max. 1.7 / w r th j-a thermal resistance, junction to ambient max. 62.5 / w
http://www.belling.com.cn 3/28/2007 page 2/6 BLV730 n-channel enhancement mode power mosfet electrical characteristics ( t c =25c unless otherwise noted ) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 400 - - v d bv dss / d t j breakdown voltage temperature coefficient reference to 25 , i d =250ua - 0.54 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =3.3a - - 1.0 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance(note3) v ds =15v, i d =3.3a 2.9 - - s i dss drain-source leakage current v ds =400v, v gs =0v - - 1 ua drain-source leakage current tc=125 v ds =320v , v gs =0v - - 50 ua i gss gate-source leakage current v gs = 20v - - 100 na q g total gate charge - - 38 nc q gs gate-source charge - - 5.7 nc q gd gate-drain charge v dd =320v i d =3.5a v gs =10v note3 - - 22 nc t (on) turn-on delay time - 10 - ns t r turn-on rise time - 15 - ns t (off) turn-off delay time - 38 - ns t f turn-off fall time v dd =200v i d =3.5a r g =25 w note3 - 14 - ns c iss input capacitance - 700 - pf c oss output capacitance - 170 - pf c rss reverse transfer capacitance v ds =25v v gs =0v f = 1mhz - 64 - pf source-drain diode characteristics symbol parameter test conditions min. typ. max. units i s continuous source diode forward current - - 5.5 a i sm pulsed source diode forward current (note1) - - 22 a v sd forward on voltage v gs =0v, i s =5.5a - - 2.0 v t r r reverse recovery time - 270 530 ns q r r reverse recovery charge v gs =0v, i s =5.5a di f /dt = 100a/us - 1.0 2.2 uc ? (1) repetitive rating: pulse width limited by maximu m junction temperature (2) l=16mh, ias=5.5a vdd=50v rg=25 w staring tj=25c (3) pulse width 300 us; duty cycle 2%
http://www.belling.com.cn 3/28/2007 page 3/6 BLV730 n-channel enhancement mode power mosfet typical characteristics fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized gate threshold voltage vs. temperature fig 4. normalized on-resistance vs. junction temperature
http://www.belling.com.cn 3/28/2007 page 4/6 BLV730 n-channel enhancement mode power mosfet typical characteristics continued fig 5. on-resistance variation vs. drain current and gate voltage fig 6. body diode forward voltage variation vs. source current and temperature fig 7. gate charge characteristics fig 8. capacitance characteristics
http://www.belling.com.cn 3/28/2007 page 5/6 BLV730 n-channel enhancement mode power mosfet typical characteristics continued fig 9. maximum safe operating area fig 10. transient thermal response curve
http://www.belling.com.cn 3/28/2007 page 6/6 BLV730 n-channel enhancement mode power mosfet test circuit and waveform fig 12. gate charge waveform fig 11. gate charge circuit fig 13. switching time circuit fig 14. switching time waveform fig 15. unclamped inductive switching test circuit fig 16. unclamped inductive switching waveforms
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