http://www.belling.com.cn - 1 - 2008.08.08 total 6 pages BLV640 n-channel enhancement mode power mosfet avalanche energy specified bv dss 200v fast switching r ds(on) 0.18 ? simple drive requirements i d 18a description this advanced low voltage mosfet is produced using bellings proprietary mos technology. designed for high efficiency switch mode power supp ly . absolute maximum ratings ( t c =25 o c unless otherwise noted ) symbol parameter value units v ds drain-source voltage 200 v v gs gate-source voltage + 30 v continuous drain current 18 a i d continuous drain current ( t c =100 o c ) 11 a i dm drain current (pulsed) (note 1) 72 a power dissipation 125 w p d linear derating factor 1.0 w/ e as single pulsed avalanche energy (note2) 580 mj i ar avalanche current 18 a e ar repetitive avalanche energy 13 mj tj operating junction temperature range -55 to +15 0 o c t sdg storage temperature range -55 to +150 o c thermal characteristics symbol parameter value units r th j-c thermal resistance, junction to case max. 0.5 / w r th j-a thermal resistance, junction to ambient max. 62.5 / w
http://www.belling.com.cn - 2 - 2008.08.08 total 6 pages BLV640 n-channel enhancement mode power mosfet electrical characteristics ( t c =25c unless otherwise noted ) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 200 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =11a - - 0.18 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance(note3) v ds =15v, i d =11a 6.7 - - s i dss drain-source leakage current v ds =200v, v gs =0v - - 1 ua drain-source leakage current tc=125 v ds =160v , v gs =0v - - 50 ua i gss gate-source leakage current v gs = 30v - - 100 na q g total gate charge - 35.7 70 nc q gs gate-source charge - 6.7 13 nc q gd gate-drain charge v dd =160v i d =18a v gs =10v note3 - 17.5 39 nc t (on) turn-on delay time - 40 - ns t r turn-on rise time - 132 - ns t (off) turn-off delay time - 93 - ns t f turn-off fall time v dd =100v i d =18a r g =25 w note3 - 31 - ns c iss input capacitance - 1312 - pf c oss output capacitance - 159 - pf c rss reverse transfer capacitance v ds =25v v gs =0v f = 1mhz - 38 - pf source-drain diode characteristics symbol parameter test conditions min. typ. max. units i s continuous source diode forward current - - 18 a i sm pulsed source diode forward current (note1) - - 72 a v sd forward on voltage v gs =0v, i s =18a - - 2.0 v t r r reverse recovery time - 300 600 ns q r r reverse recovery charge v gs =0v, i s =180a di f /dt = 100a/us - 3.4 7.1 uc note (1) repetitive rating: pulse width limited by maximu m junction temperature (2) vdd=50v, l=2.7mh, ias=18a, rg=25 w , staring tj=25c (3) pulse width 300 us; duty cycle 2%
http://www.belling.com.cn - 3 - 2008.08.08 total 6 pages BLV640 n-channel enhancement mode power mosfet typical characteristics fig 1. typical output characteristics fig 2. transfer characteristics fig 3. transconductance fig 4. on-resistance vs. drain current
http://www.belling.com.cn - 4 - 2008.08.08 total 6 pages BLV640 n-channel enhancement mode power mosfet typical characteristics continued fig 5. on-resistance vs. junction temperature fig 6. body diode forward voltage fig 7. gate charge characteristics fig 8. capacitance characteristics
http://www.belling.com.cn - 5 - 2008.08.08 total 6 pages BLV640 n-channel enhancement mode power mosfet typical characteristics continued fig 9. maximum safe operating area fig 10. transient thermal response curve
http://www.belling.com.cn - 6 - 2008.08.08 total 6 pages BLV640 n-channel enhancement mode power mosfet test circuit and waveform fig 12. gate charge waveform fig 11. gate charge circuit fig 13. switching time circuit fig 14. switching time waveform fig 15. unclamped inductive switching test circuit fig 16. unclamped inductive switching waveforms
|
