SI3457DV vishay siliconix document number: 70644 s-56944erev. c, 23-nov-98 www.vishay.com faxback 408-970-5600 2-1 p-channel 30-v (d-s) mosfet v ds (v) r ds( ) ( ) i d (a) v ds (v) r ds(on) ( ) i d (a) 30 0.065 @ v gs = 10 v 4.3 30 0.100 @ v gs = 4.5 v 3.4 (4) s (3) g (1, 2, 5, 6) d p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 4.3 a continuous drain current (t j = 150 c) a t a = 70 c i d 3.4 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.7 maximum power dissipation a t a = 25 c p d 2 w maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 5 sec.
SI3457DV vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70644 s-56944erev. c, 23-nov-98
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