FDB9403_f085 n-channel power trench ? mosfet ?2012 fairchild semiconductor corporation FDB9403_f085_f085 rev. b1 www.fairchildsemi.com 1 FDB9403_f085 n-channel power trench ? mosfet 40v, 110a, 1.2 m features ? typ r ds(on) = 1m at v gs = 10v, i d = 80a ? typ q g(tot) = 164nc at v gs = 10v, i d = 80a ? uis capability ? rohs compliant ? qualified to aec q101 applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic steering ? integrated starter/alternator ? distributed power architectures and vrm ? primary switch for 12v systems mosfet maximum ratings t j = 25c unless otherwise noted symbol parameter ratings units v dss drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current - continuous (v gs =10) (note 1) t c = 25c 110 a pulsed drain current t c = 25c see figure4 e as single pulse avalanche energy (note 2) 704 mj p d power dissipation 333 w derate above 25 o c2.22w/ o c t j , t stg operating and storage temperature -55 to + 175 o c r jc thermal resistance junction to case 0.45 o c/w r ja maximum thermal resistance junction to ambient (note 3) 43 o c/w package marking and ordering information device marking device package reel size tape width quantity FDB9403 FDB9403_f085 to-263ab 330mm 24mm 800 units notes: 1: current is limited by bondwire configuration. 2: starting t j = 25c, l = 0.18mh, i as = 88a, v dd = 40v during inductor charging and v dd = 0v during time in avalanche 3: r ja is the sum of the junction-to-case and case-to-ambient thermal re sistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. g s d d g s to-263ab fdb series july 2012
FDB9403_f085 n-channel power trench ? mosfet FDB9403_f085 rev. b1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss drain to source leakage current v ds = 4 0 v , t j = 25 o c --1 a v gs = 0v t j = 175 o c(note 4) - - 1 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.0 3.13 4.0 v r ds(on) drain to source on resistance i d = 80a, v gs = 10v t j = 25 o c -1.01.2m t j = 175 o c(note 4) - 1.63 1.96 m c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 12700 - pf c oss output capacitance - 3195 - pf c rss reverse transfer capacitance - 493 - pf r g gate resistance f = 1mhz - 2.9 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 80a - 164 213 nc q g(th) gs = 0 to 2v - 23 30 nc q gs gate to source gate charge -59-nc q gd gate to drain ?miller? charge - 25 - nc switching characteristics drain-source diode characteristics notes: 4: the maximum value is specified by design at tj = 175c. product is not tested to this condition in production. t on turn-on time v dd = 20v, i d = 80a, v gs = 10v, r gs = 1.5 - - 56 ns t d(on) turn-on delay time - 16 - ns t r rise time - 19.5 - ns t d(off) turn-off delay time - 61 - ns t f fall time - 46 - ns t off turn-off time - - 171 ns v sd source to drain diode voltage sd = 15a, v gs = 0v - - 0.80 v t rr reverse recovery time i f = 80a, di sd /dt = 100a/ s - 96 125 ns q rr reverse recovery charge - 149 194 nc ma i sd = 35a, v gs = 0v - - 0.85 v i threshold gate charge v
FDB9403_f085 rev. b1 www.fairchildsemi.com 3 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature ( o c ) figure 2. maximum continuous drain current vs case temperature figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 si ngle pul se d = 0.50 0. 20 0. 10 0. 05 0. 02 0. 01 normalized thermal imp ed ance, z t jc t, rectangular pulse duration(s) dut y cyc le - desc end ing order notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 v gs = 10v single pulse i dm , peak curren t (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows: 100 1000 note: refer to fairchild application notes an9757 2 5 50 75 1 00 125 150 175 20 0 0 100 200 300 400 500 cu rren t li mited by sil icon cu rren t li mited by package v gs = 10v i d , drain current (a) t c , case temperature( o c) FDB9403_f085 n-channel power trench ? mosfet
FDB9403_f085 rev. b1 www.fairchildsemi.com 4 figure 5. 11 01 0 0 0.1 1 10 100 100 0 10000 100us 1m s 10ms i d , drain cur rent (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds( on) single pulse t j = m ax rated t c = 25 o c dc forward bias safe operating area 1e-3 0.0 1 0 .1 1 10 100 1 000 100 00 1 10 10 0 1000 start ing t j = 150 o c starting t j = 25 o c i as , ava lan che cur rent (a ) t av , ti me in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 23456 0 50 10 0 15 0 20 0 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0. 5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.0 0 .2 0.4 0.6 0.8 1 .0 1.2 1 10 100 200 t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse d ra in cur rent (a) v sd , body diode forward volt age (v) forward diode characteristics typical characteristics figure 9. 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 5v v gs 15v top 10v 6v 5.5v 5 v bottom 80 s pulse width tj=25 o c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 10. 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 5v 5.5v i d , drain current (a) v ds , drain to source voltage (v) v gs 15v top 10v 6v 5.5v 5v bottom 80 s pulse width tj =175 o c saturation characteristics FDB9403_f085 n-channel power trench ? mosfet
FDB9403_f085 rev. b1 www.fairchildsemi.com 5 figure 11. 246810 0 2 4 6 8 10 i d = 80 a pulse duration = 80 p s dut y cycl e = 0. 5% max r ds(o n) , drain to source on-resistance ( : ) v gs , gate to source voltage (v) t j = 25 o c t j = 175 o c rdson vs gate voltage figure 12. normalized rdson vs junction te mperature -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pulse duration = 80 p s duty c ycle = 0.5% max i d = 8 0a v gs = 10v normalized dra in to source on-resistance t j , junction temperature ( o c ) figure 13. -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 v gs = v ds i d = 2 50 p a normalized gate threshold voltage t j , junction temperature( o c) normalized gate threshold voltage vs temperature figure 14. -80-40 0 40 80120160200 0.8 0.9 1.0 1.1 1.2 i d = 1ma nor malized drain to source breakdown voltage t j , junction temperature ( o c) normalized drain to source breakdown voltage vs junction temperature figure 15. 0.1 1 10 100 100 10 00 100 00 1000 00 f = 1 mhz v gs = 0v c rs s c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 16. 0 50 100 150 200 0 2 4 6 8 10 i d = 80a v dd = 16v v dd = 20v v dd = 24v q g , gate charge( nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics FDB9403_f085 n-channel power trench ? mosfet
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FDB9403_f085 rev. b1 www.fairchildsemi.com 6 FDB9403_f085 n-channel power trench ? mosfet
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