aot7n65/AOTF7N65 650v, 7a n-channel mosfet general description product summary v ds i d (at v gs =10v) 7a r ds(on) (at v gs =10v) < 1.56 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot7n65l & AOTF7N65l symbol the aot7n65 & AOTF7N65 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. units parameter absolute maximum ratings t a =25c unless otherwise noted aot7n65 AOTF7N65 750v@150 top view to-220f to-220 g d s g d s g d s aot7n65 AOTF7N65 symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. a w w/ o c c mj v/ns c maximum case-to-sink a maximum junction-to-case mj c/w c/w derate above 25 o c parameter aot7n65 AOTF7N65 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 5 38.5 192 junction and storage temperature range maximum junction-to-ambient a,d power dissipation b v units parameter aot7n65 AOTF7N65 drain-source voltage 650 gate-source voltage t c =100c a 24 pulsed drain current c continuous drain current t c =25c 7 i d 4.4 7* 4.4* v 30 avalanche current c 173 single plused avalanche energy g 347 3.4 repetitive avalanche energy c p d t c =25c thermal characteristics 300 -55 to 150 1.5 0.3 0.65 -- units c/w 65 0.5 65 3.25 top view to-220f to-220 g d s g d s g d s aot7n65 AOTF7N65 rev3:feb 2012 www.aosmd.com page 1 of 6
aot7n65/AOTF7N65 symbol min typ max units 650 750 bv dss / ? tj 0.74 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 4 4.5 v r ds(on) 1.3 1.56 w g fs 8 s v sd 0.75 1 v i s maximum body-diode continuous current 7 a i sm 24 a c iss 710 887 1060 pf c oss 60 77 92 pf c rss 5.5 7 9 pf r g 1.9 3.8 5.8 w q g 15 19 23 nc q gs 4 4.9 6 nc q gd 6.5 8.3 10 nc t d(on) 22 31 ns t r 47 66 ns t d(off) 54 76 ns t f 37 52 ns t 220 280 340 ns static drain-source on-resistance v gs =10v, i d =3.5a reverse transfer capacitance i f =7a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =3.5a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =650v, v gs =0v m a bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =10v, v ds =325v, i d =7a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =520v, i d =7a body diode reverse recovery time dynamic parameters v ds =5v i d =250 m a v ds =520v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v t rr 220 280 340 ns q rr 3 4.2 5 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =7a,di/dt=100a/ m s,v ds =100v body diode reverse recovery charge i f =7a,di/dt=100a/ m s,v ds =100v body diode reverse recovery time a. the value of r q ja is measured with the device in a still air environment with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more u seful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c, ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =3.4a, v dd =150v, r g =25 ? , starting t j =25 c rev3: feb 2012 www.aosmd.com page 2 of 6
aot7n65/AOTF7N65 typical electrical and thermal characteristics 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 1.0 1.4 1.8 2.2 2.6 0 2 4 6 8 10 12 14 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =3.5a 2.2 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 1.0 1.4 1.8 2.2 2.6 0 2 4 6 8 10 12 14 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =3.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev3: feb 2012 www.aosmd.com page 3 of 6
aot7n65/AOTF7N65 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =520v i d =7a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aot7n65 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF7N65 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 3 6 9 12 15 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =520v i d =7a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aot7n65 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF7N65 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 11: current de-rating (note b) rev3: feb 2012 www.aosmd.com page 4 of 6
aot7n65/AOTF7N65 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot7n65 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.65 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for AOTF7N65 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.25 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot7n65 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.65 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for AOTF7N65 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.25 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev3: feb 2012 www.aosmd.com page 5 of 6
aot7n65/AOTF7N65 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev3: feb 2012 www.aosmd.com page 6 of 6
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