 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1646 description collector-emitter breakdown voltage- : v (br)ceo = 100v(min.) high dc current gain : h fe = 1000(min) @i c = 1a low collector saturation voltage applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 6 v i c collector current-continuous 2 a i cp collector current-peak 3 a collector power dissipation @ t a =25 1.5 p c collector power dissipation @ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1646 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; i b = 0 b 100 v v (br)cbo collector-base breakdown voltage i c = 50 a; i e = 0 100 v v ce( sat ) collector-emitter saturation voltage i c = 1a; i b = 1ma b 1.5 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 3 ma h fe dc current gain i c = 1a; v ce = 2v 1000 10000 c ob collector output capacitance i e = 0; v cb = 10v; f= 1mhz 25 pf isc website www.iscsemi.cn 2 |
Price & Availability of 2SD1646
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |