maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 90 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5.0 v collector current i c 600 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =50v 10 na i cbo v cb =50v, t a =125c 10 a i cev v ce =30v, v eb =0.5v 50 na bv cbo i c =10a 90 115 v bv ceo i c =10ma 60 v bv ebo i e =10a 5.0 v v ce(sat) i c =150ma, i b =15ma 0.103 0.2 v v ce(sat) i c =500ma, i b =50ma 0.280 0.7 v v be(sat) i c =150ma, i b =15ma 1.3 v v be(sat) i c =500ma, i b =50ma 2.6 v h fe v ce =10v, i c =0.1ma 100 205 h fe v ce =10v, i c =1.0ma 100 h fe v ce =10v, i c =10ma 100 h fe v ce =10v, i c =150ma 100 300 h fe v ce =10v, i c =500ma 75 110 f t v ce =20v, i c =50ma, f=100mhz 200 mhz c ob v cb =10v, i e =0, f=1.0mhz 8.0 pf c ib v be =2.0v, i c =0, f=1.0mhz 30 pf CMPT2907AE enhanced specification pnp silicon transistor sot-23 case central semiconductor corp. tm r0 (11-march 2002) description: the central semiconductor CMPT2907AE is an enhanced version of the cmpt2907a pnp switching transistor in a sot-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. marking code is c2fe. enhanced specifications: ? bv cbo from 60v min to 90v min. (115v typ) ? v ce(sat) from 1.6v max to 0.7v max. (0.280v typ) ? h fe from 50 min to 75 min. (110 typ) ? ? enhanced specification. ? ? ? ? ? enhanced specification
central semiconductor corp. tm sot-23 case - mechanical outline CMPT2907AE enhanced specification pnp silicon transistor r0 (11-march 2002) lead code: 1) base 2) emitter 3) collector marking code: c2fe electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units t on v cc =30v, v be =0.5v, i c =150ma, i b1 =15ma 45 ns t d v cc =30v, v be =0.5v, i c =150ma, i b1 =15ma 10 ns t r v cc =30v, v be =0.5v, i c =150ma, i b1 =15ma 40 ns t off v cc =6.0v, i c =150ma, i b1 =i b2 =15ma 100 ns t s v cc =6.0v, i c =150ma, i b1 =i b2 =15ma 80 ns t f v cc =6.0v, i c =150ma, i b1 =i b2 =15ma 30 ns
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