350v 250v 10v 60a 80a 16a 250w -65c to +200c 200c 0.5c/w BUR52S v cbo collector ? base voltage (i e = 0v) v ceo collector ? emitter voltage (i b = 0v) v ebo collector ? emitter voltage (i c = 0v) i c collector current i cm peak collector current (t p = 10 ms) i b base current p tot total power dissipation at t case 25c t stg , storage temperature t j max. operating junction temperature r jc junction to case thermal resistance 12 3 (case) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 3.84 (0.151) 4.09 (0.161) 0.97 (0.060) 1.10 (0.043) 7.92 (0.312) 12.70 (0.50) 22.23 (0.875) max. 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) high current npn silicon transistor features ? fast switching high pulse power absolute maximum ratings (t case = 25 c unless otherwise stated) applications power switching circuits motor control mechanical data dimensions in mm(inches) semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5773 issue 1 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. to-3 (to-204aa) package pin 1 =base underside view pin 2 = emitter pin 3 = collector
BUR52S parameter test conditions min. typ. max. unit i c = 200ma i c = 0 i e = 10ma v ce = 250v i b = 0 v ce = 350v i e = 0 t c = 125 c i c = 0 v eb = 7v i c = 25a i b = 2a i c = 40a i b = 4a i c = 25a i b = 2a i c = 40a i b = 4a i c = 1a v ce = 5v f = 1mhz i c = 40a i b = 4a v cc = 100v i c = 40a i b1 =4a i b2 -4a v cc = 100v i c = 40a i b1 =4a i b2 -4a v cc = 100v collector - emitter sustaining voltage emitter ? base breakdown voltage collector emitter cut-off current collector -base cut-off current emitter ? base cut-off current collector ? emitter saturation voltage base ? emitter saturation voltage transition frequency turn ? on time fall time storage time 250 10 1 0.2 2 0.2 1 0.7 1.5 1.8 1.5 2 10 16 0.3 1 0.2 0.6 1.2 2 v v ma ma a v v mhz s electrical characteristics (t case = 25 c unless otherwise stated) v ceo(sus) v (br)ebo i ceo i cbo i ebo v ce(sat)* v be(sat)* f t t on t f t s * pulsed tp =300 s @< 1% semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5773 issue 1 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
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