SSPS7331P -13.4 a , -30 v , r ds(on) 13 m ? p-ch enhancement mode power mosfet elektronische bauelemente 19-jul-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. b e f g g a e b d c d rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provi de low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are features low r ds(on) provides higher efficiency and extends battery life low thermal impedance copper leadframe dfn3x3-8pp saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telep hones. package information package mpq leader size dfn3x3-8pp 3k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current 1 t a = 25c i d -13.4 a t a = 70c -11 a pulsed drain current 2 i dm -50 a continuous source current (diode conduction) 1 i s -2.1 a total power dissipation 1 t a = 25c p d 3.5 w t a = 70c 2.0 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient (max.) 1 t Q 10 sec r ja 35 c / w steady state 81 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. dfn3x3-8pp ref. millimeter ref. millimeter min. max. min. max. a 0.70 0.90 0 12 b 3.00bsc b 0.20 0.40 c 0.10 0.25 d 0.65bsc d 1.80 2.3 e 3.00bsc e 3.2bsc g 0.70(typ.) f 0.01 0.02 g 2.35bsc top view
SSPS7331P -13.4 a , -30 v , r ds(on) 13 m ? p-ch enhancement mode power mosfet elektronische bauelemente 19-jul-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) -1 - - v v ds =v gs , i d = -250 a gate-body leakage current i gss - - 100 na v ds =0, v gs = 25v zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs =0 - - -5 v ds = -24v, v gs =0, t j =55c on-state drain current 1 i d(on) -50 - - a v ds = -5v, v gs = -10v drain-source on-resistance 1 r ds(on) - - 13 m v gs = -10v, i d = -11.5a - - 19 v gs = -4.5v, i d = -9.3a forward transconductance 1 g fs - 29 - s v ds = -15v, i d = -11.5a diode forward voltage v sd - -0.8 - v i s =2.5a, v gs =0 dynamic 2 total gate charge q g - 25 - nc v ds = -15 v, v gs = -5 v, i d = -11.5 a gate-source charge q gs - 11 - gate-drain charge q gd - 17 - turn-on delay time t d(on) - 15 - ns v dd = -15v i d = -1a v gen = -10v r l =6 rise time t r - 13 - turn-off delay time t d(off) - 100 - fall time t f - 54 - notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
SSPS7331P -13.4 a , -30 v , r ds(on) 13 m ? p-ch enhancement mode power mosfet elektronische bauelemente 19-jul-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
SSPS7331P -13.4 a , -30 v , r ds(on) 13 m ? p-ch enhancement mode power mosfet elektronische bauelemente 19-jul-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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