standard triac absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave, 50 to 60hz 600 v i t(rms) r.m.s on-state current t j = 125 c 25 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 2 50/260 a i 2 t i 2 t t=10ms 312 a 2 s p gm peak gate power dissipation tj = 125 c 5.0 w p g(av) average gate power dissipation tj = 125 c 1.0 w i gm peak gate current tj = 125 c 2.0 a v gm peak gate voltage tj = 125 c 10 v t j operating junction temperature a.c. 1 minute - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c july, 2010. rev. 0 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 25 a ) high commutation dv/dt isolation voltage ( v iso = 1 500v ac ) 2.t2 3.gate 1.t1 symbol to-220f 1/6 tf25a60 copyright@apollo electron co., ltd., all rights reserved 1 2 3 general description this d evice is fully isol ate d packag e suitab le for ac switch ing appl icatio n, p ha se con tr ol a ppli catio n su ch a s fan sp ee d a nd te mp er atu re mo du la ti on co ntro l, li gh ting co ntro l an d sta tic switching relay. this device may substitute for BTA24-600, btb24-600 series.
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave tj = 125 c ---- ---- 3.0 ma v tm peak on-state voltage i tm = 35a, inst. tp=380? __ 1.55 v v i + gt1 gate trigger current v d = 12 v, r l =33 50 ma i - gt1 50 i - gt3 50 v + gt1 gate trigger voltage v d = 12 v, r l =33 1.5 v v - gt1 1.5 v - gt3 1.5 v gd non-trigger gate voltage t j = 125 c, v d =v drm, rl=3.3k 0.2 ---- ----- v dv/dt critical rate of rise off-state voltage t j = 125 c, v d =2/3 v drm 0 ---- ---- v/? i h holding current i t =0.5a --- -- 80 ma tf a60 2/6
-50 0 50 100 150 0.1 1 10 v + gt1 v _ gt1 v _ gt3 v gt (t o c) v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 40 80 120 160 200 240 280 60hz 50hz surge on-state current [a] time (cycles) 0 5 10 15 20 25 30 80 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 10 3 t j = 125 o c t j = 25 o c on-state current [a] on-state voltage [v] 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) i gm (2 a) 25 p g (av) (1 w) p gm (5w) v gm (10v) gate voltage [v] gate current [ma] tf25a60 3/6 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle
-50 0 50 100 150 0.1 1 10 i _ gt3 i + gt1 i _ gt1 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 0.1 1 10 transient thermal impedance [ o c/w] time (sec) 4/6 tf25a60 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit a v 33? 12v r g a v 33 ? 12v r g a v 33? 12v r g test procedure test procedure test procedure
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 13.47 13.73 0.530 0.540 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2 . 5 4 0 . 1 0 0 k5 . 0 8 0 . 2 0 0 l 2.51 2.62 0.099 0.103 m 1.23 1.36 0.048 0.054 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.023 0.039 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension 5/6 tf25a60 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 2
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 8.4 8.66 0.331 0.341 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2 . 5 4 0 . 1 0 0 k5 . 0 8 0 . 2 0 0 l 2.51 2.62 0.099 0.103 m 1.23 1.36 0.048 0.054 n 0.45 0.63 0.018 0.025 o 0.65 0.78 0.0025 0.031 p 5.0 0.197 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension, forming 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 2 p 6/6 tf25a60
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