v ds i d (at v gs =4.5v) 8a r ds(on) (at v gs =4.5v) < 12.5m w r ds(on) (at v gs =2.5v) < 15m w r ds(on) (at v gs =1.8v) < 19m w r ds(on) (at v gs =1.5v) < 24m w symbol the AON2406 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v g d s symbol v ds v gs i dm t j , t stg symbol t 10s steady-state gate-source voltage drain-source voltage 20 c/w r q ja 37 66 32 45 thermal characteristics units maximum junction-to-ambient a t a =25c pulsed drain current c parameter 6 v maximum units parameter i d a t a =70c continuous drain current g 8 v 8 c/w maximum junction-to-ambient a d 80 power dissipation a p d w t a =70c 1.8 t a =25c c typ max 2.8 junction and storage temperature range -55 to 150 AON2406 20v n-channel mosfet general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.4 0.67 1.0 v i d(on) 32 a 10 12.5 t j =125c 13.5 17 11.5 15 m w 14 19 m w 17 24 m w g fs 50 s v sd 0.6 1 v i s 4.5 a c iss 1140 pf c oss 165 pf c rss 110 pf r g 2.2 w q g 12.5 18 nc q gs 1.2 nc q gd 2.7 nc t 2.7 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz gate source charge gate drain charge total gate charge v gs =4.5v, v ds =10v, i d =8a zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =8a v gs =1.5v, i d =1a forward transconductance diode forward voltage v gs =2.5v, i d =6a v gs =1.8v, i d =4a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =8a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =8v t d(on) 2.7 ns t r 3 ns t d(off) 37 ns t f 7 ns t rr 11 ns q rr 3 nc turn-on delaytime body diode reverse recovery charge i f =8a, di/dt=100a/ m s turn-on rise time turn-off delaytime i f =8a, di/dt=100a/ m s v gs =4.5v, v ds =10v, r l =1.25 w , r gen =3 w turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. AON2406 20v n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 6 8 10 12 14 16 18 20 0 3 6 9 12 15 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =6a v gs =4.5v i d =8a 25 c 125 c v ds =5v v gs =1.8v v gs =4.5v 0 10 20 30 40 50 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 1.8v 4.5v 2.5v 3.5v v gs =2.5v v gs =1.8v i d =4a v gs =1.5v v gs =1.5v i d =1a 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =8a 25 c 125 c AON2406 20v n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 1 2 3 4 5 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- c oss c rss v ds =10v i d =8a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 40 ambient (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse safe operating area (note f) r q ja =80 c/w AON2406 20v n-channel mosfet www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr AON2406 20v n-channel mosfet www.freescale.net.cn 5 / 5
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