2sa1709 / 2sc4489 no.3096-1/7 features ? adoption of fbet, mbit processes ? high breakdown voltage, large current capacity ? fast switching speed ( )2sa1709 speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)120 v collector-to-emitter voltage v ceo (--)100 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2 a collector current (pulse) i cp (--)3 a collector dissipation p c 1w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7540-001 ordering number : EN3096A 82912 tkim tc-00002803/40804tn(pc)/5169mo, ts sanyo semiconductors data sheet 2sa1709/2sc4489 pnp/npn epitaxial planar silicon transistor high-voltage switching applications http://www.sanyosemi.com/en/network/ product & package information ? package : nmp(taping) ? jeita, jedec : sc-71 ? minimum packing quantity : 2,500 pcs./box marking(nmp(taping)) electrical connection 2 1 3 2sc4489 2 1 3 2sa1709 a1709 lot no. rank c4489 lot no. rank 1 : emitter 2 : collector 3 : base sanyo : nmp(taping) 6.9 3 2 1 2.5 1.05 1.45 2.54 2.54 1.0 0.6 0.45 0.5 0.9 4.5 1.0 1.0 15.0 2sa1709s-an 2sa1709t-an 2sc4489s-an 2sc4489t-an
2sa1709 / 2sc4489 no.3096-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)100v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe v ce =(--)5v, i c =(--)100ma 140* 400* gain-bandwidth product f t v ce =(--)10v, i c =(--)100ma 120 mhz output capacitance cob v cb =(--)10v, f=1mhz (25)16 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)100ma (--0.22)0.13 (--0.6)0.4 v base-to-emitter saturation voltage vbe(sat) i c =(--)1a, i b =(--)100ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)120 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)100 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. 80 ns storage time t stg (750)1000 ns fall time t f (40)50 ns * : the 2sa1709/2sc4489 are classi ed by 100ma h fe as follows : rank s t h fe 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2sa1709s-an nmp(taping) 2,500pcs./bag pb free 2sa1709t-an nmp(taping) 2,500pcs./bag 2sc4489s-an nmp(taping) 2,500pcs./bag 2sc4489t-an nmp(taping) 2,500pcs./bag i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a itr04341 2sc4489 --2.0 --1.6 --1.2 --0.8 --0.4 0 0 --1 --2 --4 --5 -- 3 itr04340 2sa1709 i b =0a --1ma --2ma --20ma --10ma --5ma --3ma --30ma --40ma --50ma i b =0a 1ma 3ma 2ma 5ma 30ma 20ma 10ma 40ma 50ma 2.0 1.6 1.2 0.8 0.4 0 012 45 3 v r r l v cc = --50v v be =5v i c =10i b1 = --10i b2 = --0.7a + + 50 input output r b 100 f 470 f pw=20 s i b1 i b2 d.c. 1% v r r l v cc =50v v be = --5v i c =10i b1 = --10i b2 =0.7a + + 50 input output r b 100 f 470 f pw=20 s i b1 i b2 d.c. 1% 2sc4489 2sa1709
2sa1709 / 2sc4489 no.3096-3/7 gain-bandwidth product, f t -- mhz f t -- i c f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz collector current, i c -- a dc current gain, h fe h fe -- i c collector current, i c -- a collector current, i c -- a dc current gain, h fe h fe -- i c i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v be i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a itr04343 2sc4489 itr04342 2sa1709 i b =0a --1ma --2ma --3ma --4ma --6ma -- 5 m a i b =0a 0.5ma 1.0ma 1.5ma 3.5ma 2.0ma 3.0ma 4.0ma 4.5ma 2.5ma 5.0ma --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --10 --20 --40 --50 --30 1.0 0.8 0.6 0.4 0.2 0 01020 4050 30 100 10 3 2 7 5 3 2 2sa1709 v ce = --10v itr04348 2sc4489 v ce =10v itr04349 ta=75 c 25 c -- 2 5 c 2sc4489 v ce =5v itr04347 100 3 --0.01 1000 7 5 3 2 7 5 23 5 7 --0.1 72357 --1.0 23 2sa1709 v ce = --5v itr04346 ta=75 c --25 c 25 c 100 10 3 2 7 5 3 2 0.01 23 5 7 0.1 72357 1.0 23 --0.01 23 5 7 --0.1 723 23 5 --1.0 7 100 3 1000 7 5 3 2 7 5 ta=75 c 25 c --25 c 2sc4489 v ce =5v itr04345 0 --2.4 --2.0 --1.6 --1.2 --0.8 --0.4 0 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 2sa1709 v ce = --5v itr04344 ta=75 c --25 c 25 c 0.01 23 5 7 0.1 723 23 5 1.0 7 0 2.4 2.0 1.6 1.2 0.8 0.4 0 1.2 1.0 0.8 0.6 0.4 0.2
2sa1709 / 2sc4489 no.3096-4/7 v be (sat) -- i c collector current, i c -- a collector current, i c -- a v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv base-to-emitter saturation voltage, v be (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a v ce (sat) -- i c v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v cob -- v cb cob -- v cb output capacitance, cob -- pf collector-to-emitter voltage, v ce -- v a s o collector current, i c -- a ambient temperature, ta -- c p c -- ta collector dissipation, p c -- w 2sc4489 f=1mhz 5 2 3 3 5 7 7 100 10 --10 --100 --1.0 57 723 57 22 3 itr04350 2sa1709 f=1mhz itr04351 10 100 1.0 57 723 57 22 3 5 2 3 3 5 7 7 100 10 5 3 1.0 2 0.1 3 0.01 2 5 5 3 2 5 357 2 5 37 2 1.0 10 25 37 100 itr04356 itr04355 itr04357 --10 7 5 3 2 7 5 3 --1.0 --0.01 7237 5237 53 2 --0.1 --1.0 itr04354 2sa1709 i c / i b =10 2sc4489 i c / i b =10 1.2 1.0 0 0.8 0.6 0.4 0.2 100 140 120 160 20 060 40 80 2sa1709 / 2sc4489 ta= --25 c 75 c 25 c 100ms 10ms dc operation ta= --25 c 75 c 25 c itr04353 ta=75 c - -25 c 25 c 2sc4489 i c / i b =10 --0.01 72 23 57 23 3 57 --0.1 --1.0 3 2 7 5 3 2 7 5 --1000 --100 --10 itr04352 ta=75 c --25 c 25 c 2sa1709 i c / i b =10 0.01 73 2 23 57 23 57 0.1 1.0 3 2 7 5 3 2 7 5 1000 100 10 10 7 5 3 2 7 5 3 1.0 0.01 7237 5237 53 2 0.1 1.0 2sa1709 / 2sc4489 1ms single pulse ta=25 c (for pnp, minus sign is omitted.) i c =2.0a i cp =3.0a
2sa1709 / 2sc4489 no.3096-5/7 bag packing speci cation 2sa1709s-an, 2sa1709t-an, 2sc4489s-an, 2sc4489t-an
2sa1709 / 2sc4489 no.3096-6/7 outline drawing 2sa1709s-an, 2sa1709t-an, 2sc4489s-an, 2sc4489t-an mass (g) unit 0.275 * for reference mm
2sa1709 / 2sc4489 ps no.3096-7/7 this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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