vs-6cut10-e, vs-6cwt10fn-e www.vishay.com vishay semiconductors revision: 03-nov-11 1 document number: 94662 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance schottky generation 5.0, 2 x 3 a features ? 175 c high perfo rmance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for reverse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? compliant to rohs directive 2002/95/ec applications ? specific for pv cells bypass diode ? high efficiency smps ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc/dc systems ? increased power density systems product summary package d-pak (to-252aa), i-pak (to-251aa) i f(av) 2 x 3 a v r 100 v v f at i f 0.63 v i rm max. 1 ma at 125 c t j max. 175 c diode variation common cathode e as 12 mj d-pak (to-252aa) i-pak (to-251aa) vs-6cut10-e vs-6cwt10fn-e base common cathode common cathode 2 4 13 anode anode base common cathode common cathode 2 4 13 anode anode major ratings and characteristics symbol characteristics values units v rrm 100 v v f 3 a pk , t j = 125 c (typical, per leg) 0.6 t j range - 55 to 175 c voltage ratings parameter symbol test conditions vs-6cut10-e vs-6cwt10fn-e units maximum dc reverse voltage v r t j = 25 c 100 v
vs-6cut10-e, vs-6cwt10fn-e www.vishay.com vishay semiconductors revision: 03-nov-11 2 document number: 94662 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % absolute maximum ratings parameter symbol test conditions values units maximum average forward current per leg i f(av) 50 % duty cycle at t c = 166 c, rectangular waveform 3 a per device 6 maximum peak one cycle non-repetitive surge current per leg i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 440 10 ms sine or 6 ms rect. pulse 70 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 4 a, l = 1.5 mh 12 mj repetitive avalanche current per leg i ar limited by frequency of operat ion and time pulse duration so that t j < t j max. i as at t j max. as a function of time pulse. see fig. 8 i as at t j max. a electrical specifications parameter symbol test condi tions typ. max. units forward voltage drop per leg v fm (1) 3 a t j = 25 c 0.720 0.79 v 6 a 0.825 0.91 3 a t j = 125 c 0.60 0.63 6 a 0.69 0.74 reverse leakage current per leg i rm (1) t j = 25 c v r = rated v r 0.3 30 a t j = 125 c 0.3 1 ma junction capaci tance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 114 - pf series inductance per leg l s measured lead to lead 5 mm from package body 8.0 - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case per leg r thjc dc operation 4.7 c/w maximum thermal resistance, junction to ca se per device 2.35 typical thermal resistance, case to heatsink r thcs 0.3 approximate weight 0.3 g 0.01 oz. marking device case style i-pak 6cut10 case style d-pak 6cwt10fn
vs-6cut10-e, vs-6cwt10fn-e www.vishay.com vishay semiconductors revision: 03-nov-11 3 document number: 94662 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 100 1 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i f - instantaneous forward current (a) v fm - forward voltage drop (v) t j = 175 c t j = 25 c t j = 125 c 0 5 10 15 20 25 30 35 40 45 i r - reverse current (ma) v r - reverse voltage (v) 0.0001 0.001 0.01 0.1 1 10 175 c 150 c 125 c 100 c 75 c 50 c 25 c 1000 100 10 0 5 10 15 20 25 30 35 40 45 c t - junction capacitance (pf) v r - reverse voltage (v) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) thermal impedance z thjc (c/w) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 single pulse (thermal resistance)
vs-6cut10-e, vs-6cwt10fn-e www.vishay.com vishay semiconductors revision: 03-nov-11 4 document number: 94662 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-re petitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 012335 allowable case temperature (c) i f(av) - average forward current (a) 145 160 155 150 165 170 175 180 dc see note (1) square wave (d = 0.50) 80 % rated v r applied 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 average power loss (w) i f(av) - average forward current (a) 0 0.5 1.5 1 2 2.5 270 180 120 90 72 rms limit dc t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 10 100 1000 10 000 10 100 1000
vs-6cut10-e, vs-6cwt10fn-e www.vishay.com vishay semiconductors revision: 03-nov-11 5 document number: 94662 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - reverse bias safe operating area (a valanche current vs. rectangular pulse duration) fig. 9 - reverse bias safe operating area (avalanche energy vs. rectangular pulse duration) 110 100 0.1 1 10 100 rectangular pulse duration (s) avalanche current (a) t j = 25 c t j = 175 c t j = 125 c 1 10 100 1 10 100 rectangular pulse duration (s) avalanche energy (mj) t j = 25 c t j = 125 c t j = 175 c
vs-6cut10-e, vs-6cwt10fn-e www.vishay.com vishay semiconductors revision: 03-nov-11 6 document number: 94662 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions i-pak (to-251aa) www.vishay.com/doc?95024 d-pak (to-252aa) www.vishay.com/doc?95448 part marking information i-pak-e (to-251aa) www.vishay.com/doc?95097 d-pak-e (to-252aa) www.vishay.com/doc?95176 2 - current rating (2 x 3 a) 1 - vishay semiconductors product 4 - package: none = tube (75 pieces) 3 - circuit configuration: c = common cathode 5 - t = trench 6 - voltage rating (10 = 100 v) 7 - to-252aa (d-pak) 8 - d-pak, i-pak: d-pak only: tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) u = i-pak w = d-pak - environmental digit: -e = rohs compliant and terminations lead (pb)-free 9 device code 5 1 3 2 4 6 7 8 9 vs- 6 c u t 10 fn trl -e
document number: 95024 for technical questions within your region, please contact one of the following: www.vishay.com revision: 24-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 i-pak - s outline dimensions vishay semiconductors dimensions for i-pak - s in millimeters symbol dimensional requirements min. nom. max. e 6.40 6.60 6.70 l 3.98 4.13 4.28 l4 0.66 0.76 0.86 l5 1.96 2.16 2.36 d 6.00 6.10 6.20 h 11.05 11.25 11.45 b 0.64 0.76 0.88 b2 0.77 0.84 1.14 b3 5.21 5.34 5.46 b4 0.41 0.51 0.61 e 2.286 bsc a 2.20 2.30 2.38 c 0.40 0.50 0.60 c2 0.40 0.50 0.60 d1 5.30 - - e1 4.40 - - e d l5 l4 ee a c2 l c h d1 1 2 3 4 b b4 b2 b3 e1
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