for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 2 hmc308 / 308E general purpose 100 mw gaas mmic amplifier, 0.8 - 3.8 ghz v05.1107 general description features functional diagram the hmc308 & hmc308E are low cost mesfet mmic ampli ers that operate from a single +3 to +5v supply from 0.8 to 3.8 ghz. the surface mount sot26 ampli er can be used as a broadband ampli- er stage or used with external matching for opti- mized narrow band applications. with vdd biased at +5v, the hmc308 & hmc308E offers 18 db of gain and +20 dbm of saturated output power while requir- ing only 53 ma of current. this ampli er is ideal as a driver ampli er for transmitters or for use as a local oscillator (lo) ampli er to increase drive levels for passive mixers. the ampli er occupies 0.014 in 2 (9 mm 2 ), making it ideal for compact radio designs. gain: 18 db p1db output power: +17 dbm@ +5v single supply: +3v or +5v no external components integrated dc blocks ultra small package: sot26 electrical speci cations, t a = +25 c, as a function of vdd typical applications broadband or narrow band applications: ? cellular/pcs/3g ? fixed wireless & telematics ? cable modem termination systems ? wlan, bluetooth & rfid parameter vdd = +3v vdd = +5v vdd = +5v vdd = +5v units min. typ. max. min. typ. max. min. typ. max. min. typ. max. frequency range 2.3 - 2.7 0.8 - 2.3 2.3 - 2.7 2.7 - 3.8 ghz gain 13 15.5 14 18 13 16 10 13 db gain variation over temperature 0.025 0.035 0.025 0.035 0.025 0.035 0.025 0.035 db/c input return loss 11 8 11 13 db output return loss 17 13 12 13 db output power for 1 db compression (p1db) 12 14 14 17 13.5 16.5 12 15 dbm saturated output power (psat) 17 20 19.5 17 dbm output third order intercept (ip3) 23 26 27 30 26 29 24 27 dbm noise figure 7 7.5 7 7 db supply current (idd) 50 53 53 53 ma
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 3 -30 -20 -10 0 10 20 30 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 s11 s21 s22 response (db) frequency (ghz) 0 4 8 12 16 20 24 0.5 1 1.5 2 2.5 3 3.5 4 vdd=+5v vdd=+3v p1db (dbm) frequency (ghz) 0 4 8 12 16 20 24 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -40 c gain (db) frequency (ghz) 0 4 8 12 16 20 24 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -40 c gain (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 0.5 1 1.5 2 2.5 3 3.5 4 s11 vdd=+5v s22 vdd=+5v s11 vdd=+3v s22 vdd=+3v return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 0.5 1 1.5 2 2.5 3 3.5 4 vdd=+5v vdd=+3v reverse isolation (db) frequency (ghz) gain vs. temperature @ vdd = +5v gain vs. temperature @ vdd = +3v p1db vs. vdd bias reverse isolation vs. vdd bias broadband gain & return loss @ vdd = +5v input & output return loss vs. vdd bias hmc308 / 308E v05.1107 general purpose 100 mw gaas mmic amplifier, 0.8 - 3.8 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 4 -4 0 4 8 12 16 20 24 28 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -4 0 4 8 12 16 20 24 28 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 4 8 12 16 20 24 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -40 c psat (dbm) frequency (ghz) 4 8 12 16 20 24 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -40 c p1db (dbm) frequency (ghz) psat vs. temperature @ vdd = +5v output p1db vs. temperature @ vdd = +5v power compression @ 2.0 ghz, vdd = +5v power compression @ 2.5 ghz, vdd = +5v output ip3 vs. temperature @ vdd = +5v 6 10 14 18 22 26 30 34 38 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) hmc308 / 308E v05.1107 general purpose 100 mw gaas mmic amplifier, 0.8 - 3.8 ghz typical supply current vs. vdd vdd (vdc) idd (ma) +2.5 49 +3.0 50 +3.5 51 +4.5 50 +5.0 53 +5.5 54
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 5 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -4 0 4 8 12 16 20 24 28 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 4 8 12 16 20 24 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -40 c psat (dbm) frequency (ghz) 4 8 12 16 20 24 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -40 c p1db (dbm) frequency (ghz) psat vs. temperature @ vdd = +3v output p1db vs. temperature @ vdd = +3v power compression @ 2.0 ghz, vdd = +3v power compression @ 2.5 ghz, vdd = +3v output ip3 vs. temperature @ vdd = +3v 6 10 14 18 22 26 30 34 38 0.5 1 1.5 2 2.5 3 3.5 4 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) hmc308 / 308E v05.1107 general purpose 100 mw gaas mmic amplifier, 0.8 - 3.8 ghz absolute maximum ratings drain bias voltage (vdd) +7.0 vdc rf input power (rfin)(vdd = +5vdc) +10 dbm channel temperature 150 c continuous pdiss (t = 85 c) (derate 6.25 mw/c above 85 c) 0.406 w thermal resistance (channel to lead) 160 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1a electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 6 outline drawing pin number function description interface schematic 1 rfout this pin is ac coupled and matched to 50 ohms. 2, 5, 6 gnd these pins must be connected to rf/dc ground. 3 vdd power supply voltage. 4 rfin this pin is ac coupled and matched to 50 ohms. pin descriptions part number package body material lead finish msl rating package marking [3] hmc308 low stress injection molded plastic sn/pb solder msl1 [1] h308 xxxx hmc308E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 308E xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads must be soldered to pcb rf ground hmc308 / 308E v05.1107 general purpose 100 mw gaas mmic amplifier, 0.8 - 3.8 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 7 hmc308 / 308E v05.1107 general purpose 100 mw gaas mmic amplifier, 0.8 - 3.8 ghz evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 103802 [1] item description j1, j2 pcb mount sma connector j3, j4 dc pins u1 hmc308 / hmc308E ampli er pcb [2] 103220 evaluation board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: roger 4350
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