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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD855 description c ollector-emitter breakdown voltage- : v (br)ceo = 60v(min) good linearity of h fe wide area of safe operation complement to type 2sb760 applications medium power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 1 a i cm collector current-peak 2 a p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD855 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 30ma; i b = 0 60 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.125a b 1.0 v v be( on ) base-emitter on voltage i c = 1a; v ce = 4v 1.3 v i ceo collector cutoff current v ce = 60v; i b = 0 b 300 a i ces collector cutoff current v ce = 80v; i e = 0 200 a i ebo emitter cutoff current v eb = 5v; i c = 0 1 ma h fe-1 dc current gain i c = 0.2a; v ce = 4v 40 450 h fe-2 dc current gain i c = 1a; v ce = 4v 15 ? h fe- 1 classifications r q p o 40-90 70-150 120-250 200-450 isc website www.iscsemi.cn 2 |
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