|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
inchange semiconductor isc product specification isc silicon npn power transistor 2SD568 description high collector current:: i c = 7a low collector saturation voltage : v ce(sat) = 0.5v(max)@i c = 5a complement to type 2sb707 applications designed for low-frequency power amplifiers and low-speed switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current-continuous 7 a i cm collector current-peak 15 a i b b base current-continuous 3.5 a total power dissipation @ t c =25 40 p c total power dissipation @ t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD568 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 60 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 0.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.5a b 1.5 v i cbo collector cutoff current v cb = 60v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 3a; v ce = 1v 40 200 h fe-2 dc current gain i c = 5a; v ce = 1v 20 ? h fe- 1 classifications m l k 40-80 60-120 100-200 isc website www.iscsemi.cn 2 |
Price & Availability of 2SD568 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |