3/5/03 package dimensions page 1 of 7 ?2003 fairchild semiconductor corporation QTLP660CIR 1.8mm dome lens emitting diode QTLP660CIR features 1.8mm dome lens package available in 0.315 (8mm) width tape on 7 (178mm) diameter reel; 2,000 units per reel narrow emission angle, 30 wavelength = 940 nm, gaas water clear lens matched photosensor: qtlp660cpdf 0.091 (2.3) 0.083 (2.1) 0.102 (2.6) 0.087 (2.2) 0.134 (3.40) 0.118 (3.00) 0.028 (0.7) 0.020 (0.5) 0.024 (0.6) 0.016 (0.4) 0.106 (2.7) 0.098 (2.5) 0.079 (2.0) 7 0.075 (1.9) 0.067 (1.7) r0.004 (0.1) 5 + - polarity side top bottom note: dimensions for all drawings are in inches (mm).
3/5/03 page 2 of 7 ? 2003 fairchild semiconductor corporation QTLP660CIR 1.8mm dome lens emitting diode QTLP660CIR notes: 1. rma ux is recommended. 2. methanol or isopropyl alcohols are recommended as cleaning agents. 3. soldering iron tip at 1/16" (1.6mm) from housing 4. at 25 c or below absolute maximum ratings (t a = 25 c unless otherwise speci ed) parameter symbol rating unit operating temperature t opr -40 to +85 c storage temperature t stg -40 to +90 c soldering temperature (iron) (1,2,3) t sol-i 240 for 5 sec c soldering temperature (flow) (1,2) t sol-f 260 for 10 sec c continuous forward current i f 65 ma reverse voltage v r 5v power dissipation (4) p d 130 mw peak forward current (pulse width = 100s, duty cycle=1%) i fd 1.0 a electrical / optical characteristics (t a =25 c) parameter test conditions symbol min. typ. max. units peak emission wavelength i f = 20 ma p 940 nm emission angle i f = 20 ma 15 deg. forward voltage i f = 20 ma v f 1.2 1.5 v i f = 100 ma, t p = 100 s, duty cycle = 0.01 1.4 1.85 i f = 1 a, t p = 100 s, duty cycle = 0.01 2.6 4.0 reverse current v r = 5 v i r 100 a radiant intensity i f = 20 ma ee 1.0 3.0 mw/sr i f = 100 ma, t p = 100 s, duty cycle = 0.01 14 i f = 1 a, t p = 100 s, duty cycle = 0.01 140 rise time i f = 100 ma, t r 1 s fall time t p = 20 ms t f 1 s
3/5/03 page 3 of 7 ? 2003 fairchild semiconductor corporation QTLP660CIR 1.8mm dome lens emitting diode QTLP660CIR typical performance curves 100 120 140 980 10 4 10 1 01234 10 3 10 2 960 940 920 900 5 3 0.1 25 50 75 100 120 1 -25 0 0 10 10 20 20 30 30 40 0.6 0.4 0.2 0 0.2 0.4 0.6 50 60 70 80 1.0 0.9 0.8 0.7 25 50 75 100 100 80 60 40 20 0 880 900 920 940 960 980 1000 1020 1040 80 60 40 20 0 -25 0 20 40 60 80 100 ambient temperature ( c) fig. 1 forward current vs. ambient temperature fig. 3 peak emission wavelength vs. ambient temperature fig. 4 forward current vs. forward voltage fig. 2 relative radiant intensity vs. wavelength fig. 5 relative intensity vs. ambient temperature ( c) fig. 6 relative radiant intensity vs. angular displacement forward current i f (ma) ambient temperature t a ( c) peak emission wavelength (nm) ie - radiant intensity (mw/sr) relative radiant intensity forward voltage (v) forward current i f (ma) wavelengthl (nm) relative radiant intensity (%) i f = 20 ma t a = 25?c tp=100 s duty cycle=0.01 i f =20ma
3/5/03 page 4 of 7 ? 2003 fairchild semiconductor corporation QTLP660CIR 1.8mm dome lens emitting diode QTLP660CIR typical performance curves 1000 100 10 1 10 0 10 1 10 2 10 3 10 4 if forward current (ma) fig. 7 relative intensity vs. forward current ie radiant intensity (mw/sr)
3/5/03 page 5 of 7 ? 2003 fairchild semiconductor corporation QTLP660CIR 1.8mm dome lens emitting diode QTLP660CIR recommended printed circuit board pattern recommended ir reflow soldering profile 0.098 (2.50) 0.079 (2.00) 0.098 (2.50) 0.098 (2.50) 60 - 120 sec preheating +5 c/s max -5 c/s max 120 - 150 c max 5 sec max soldering time 240 c max
3/5/03 page 6 of 7 ? 2003 fairchild semiconductor corporation QTLP660CIR 1.8mm dome lens emitting diode QTLP660CIR tape and reel dimensions 2 . 5 17 8 . 0 1 3 . 0 60 . 2 0.05 3.4 0.1 4.0 4.0 12.0 0.230 0.1 1.55 0.05 2.6 2.75 5.5 dimensional tolerance is 0.1mm unless otherwise specified angle: 0.5 unit: mm polarity
3/5/03 life support policy fairchild s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. page 7 of 7 ? 2003 fairchild semiconductor corporation QTLP660CIR 1.8mm dome lens emitting diode QTLP660CIR
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