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MRF8S9202Nr3 1 rf device data freescale semiconductor rf power field effect transistor n--channel enhancement--mode lateral mosfet designed for cdma base station applications with frequencies from 920 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1300 ma, p out = 58 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 920 mhz 19.0 36.3 6.3 --38.2 940 mhz 19.1 37.2 6.2 --38.0 960 mhz 18.9 37.3 6.1 --37.1 ? capable of handling 7:1 vswr, @ 32 vdc, 920 mhz, 290 watts cw output power (3 db input overdrive from rated p out ). designed for enhanced ruggedness. ? typical p out @ 1 db compression point ? 200 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 58 w cw, 28 vdc, i dq = 1300 ma, 920 mhz case temperature 90 c, 200 w cw, 28 vdc, i dq = 1300 ma, 920 mhz r jc 0.31 0.27 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: MRF8S9202N rev. 0, 12/2010 freescale semiconductor technical data 920--960 mhz, 58 w avg., 28 v single w--cdma lateral n--channel rf power mosfet case 2021--03, style 1 o m -- 7 8 0 -- 2 plastic MRF8S9202Nr3 ? freescale semiconductor, inc., 2010. a ll rights reserved.
2 rf device data freescale semiconductor MRF8S9202Nr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 800 adc) v gs(th) 1.5 2.3 3.0 vdc gate quiescent voltage (v ds =28vdc,i d = 1300 madc) v gs(q) ? 3.1 ? vdc fixture gate quiescent voltage (1) (v dd =28vdc,i d = 1300 madc, measured in functional test) v gg(q) 4.6 6.2 7.6 vdc drain--source on--voltage (v gs =10vdc,i d =3.3adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (2) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1300 ma, p out = 58 w avg., f = 920 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 18.0 19.0 21.0 db drain efficiency d 34.5 36.3 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.0 6.3 ? db adjacent channel power ratio acpr ? --38.2 --35.0 dbc input return loss irl ? -- 1 3 -- 9 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1300 ma, p out =58wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 920 mhz 19.0 36.3 6.3 --38.2 -- 1 3 940 mhz 19.1 37.2 6.2 --38.0 -- 1 5 960 mhz 18.9 37.3 6.1 --37.1 -- 1 5 1. v gg =2xv gs(q) . parameter measured on freescale test fixture, due to resi stive divider network on the board. refer to test circuit schematic. 2. part internally matched both on input and output. (continued)
MRF8S9202Nr3 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1300 ma, 920--960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 200 ? w imd symmetry @ 180 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 7.5 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 70 ? mhz gain flatness in 40 mhz bandwidth @ p out =58wavg. g f ? 0.3 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.02 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.006 ? db/ c
4 rf device data freescale semiconductor MRF8S9202Nr3 figure 1. MRF8S9202Nr3 test circuit component layout MRF8S9202N rev. 0 r1 r2 c3 c8 c9 c17 c18 r3 c10 c2 c4 c5 c13 c14 c15 c16 c12 c6 c7 c11 c1 table 6. MRF8S9202Nr3 test circuit c omponent designations and values part description part number manufacturer c1, c2 220 f, 63 v electrolytic capacitors 222212018221 vishay bc c3, c4, c5, c6, c7 10 f, 50 v chip capacitors c5750x5r1h106mt tdk c8 2.7 pf chip capacitor atc100b2r7bt500xt atc c9, c10, c11, c12 47 pf chip capacitors atc100b470jt500xt atc c13, c14 1.2 pf chip capacitors atc100b1r2bt500xt atc c15 2 pf chip capacitor atc100b2r0bt500xt atc c16 4.3 pf chip capacitor atc100b4r3bt500xt atc c17, c18 3.3 pf chip capacitors atc100b3r3bt500xt atc r1, r2 1k ? , 1/8 w chip resistors wcr08051kg welwyn r3 10 ? , 1/8 w chip resistor 232273461009l phycomp pcb 0.020 , r =3.5 ro4350b rogers
MRF8S9202Nr3 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) irl, input return loss (db) 820 irl g ps acpr f, frequency (mhz) figure 2. output peak--to--average ratio compression (parc) broadband performance @ p out = 58 watts avg. -- 2 0 -- 4 -- 8 -- 1 2 -- 1 6 16 21 20.5 20 -- 4 6 45 40 35 30 -- 3 6 -- 3 8 -- 4 0 -- 4 2 d , drain efficiency (%) d 19.5 19 18.5 18 17.5 17 16.5 840 860 880 900 920 940 960 980 25 -- 4 4 -- 2 4 parc parc (db) -- 1 . 4 -- 0 . 8 -- 1 -- 1 . 2 -- 1 . 6 acpr (dbc) v dd =28vdc,p out =58w(avg.),i dq = 1300 ma single--carrier w--cdma, 3.84 mhz channel bandwidth figure 3. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 180 w (pep), i dq = 1300 ma two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz figure 4. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 50 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 30 70 90 130 10 70 60 50 40 30 20 d , drain efficiency (%) -- 1 d b = 4 9 w -- 2 d b = 6 9 w -- 3 d b = 9 5 w 110 v dd =28vdc,i dq = 1300 ma, f = 940 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf d acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 20 g ps , power gain (db) 19.5 19 18.5 18 17.5 17 g ps input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf -- 0 . 6
6 rf device data freescale semiconductor MRF8S9202Nr3 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 5. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 15 21 0 60 50 40 30 20 d , drain efficiency (%) g ps , power gain (db) 20 19 10 100 200 10 -- 6 0 acpr (dbc) 18 17 16 0 -- 3 0 -- 4 0 -- 5 0 figure 6. broadband frequency response 0 24 600 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1300 ma 16 12 8 700 gain (db) 20 gain 800 900 1000 1100 1200 1300 1400 irl -- 1 8 0 -- 3 -- 6 -- 9 -- 1 2 irl (db) 4--15 960 mhz v dd =28vdc,i dq = 1300 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probabilit y on ccdf 940 mhz 920 mhz 920 mhz 940 mhz 960 mhz d w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 7. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 8. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
MRF8S9202Nr3 7 rf device data freescale semiconductor v dd =28vdc,i dq = 1300 ma, p out =58wavg. f mhz z source ? z load ? 820 1.46 -- j3.27 2.14 -- j2.57 840 1.62 -- j3.12 2.08 -- j2.30 860 1.80 -- j3.01 2.05 -- j2.05 880 2.00 -- j2.95 2.05 -- j1.82 900 2.20 -- j2.95 2.06 -- j1.60 920 2.38 -- j3.00 2.09 -- j1.38 940 2.52 -- j3.12 2.14 -- j1.18 960 2.62 -- j3.29 2.21 -- j0.98 980 2.63 -- j3.49 2.30 -- j0.81 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor MRF8S9202Nr3 alternative peak tune load pull characteristics p in , input power (dbm) v dd =28vdc,i dq = 1150 ma, pulsed cw, 10 sec(on), 10% duty cycle 56 53 50 57.5 54.5 45.5 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 51.5 59 27 60.5 48.5 47 28.5 ideal actual 960 mhz 44 30 31.5 33 34.5 36 37.5 39 40.5 42 43.5 940 mhz 920 mhz 960 mhz 940 mhz 920 mhz f (mhz) p1db p3db watts dbm watts dbm 920 298 54.7 362 55.6 940 290 54.6 358 55.5 960 283 54.5 352 55.5 test impedances per compression level f (mhz) z source ? z load ? 920 p1db 1.66 -- j3.06 4.27 -- j0.73 940 p1db 2.08 -- j3.44 4.57 + j0.04 960 p1db 2.86 -- j3.13 4.40 + j0.94 figure 10. pulsed cw output power versus input power @ 28 v
MRF8S9202Nr3 9 rf device data freescale semiconductor package dimensions
10 rf device data freescale semiconductor MRF8S9202Nr3
MRF8S9202Nr3 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor MRF8S9202Nr3 product documentation and software refer to the following documents and software to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 dec. 2010 ? initial release of data sheet
MRF8S9202Nr3 13 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MRF8S9202N rev. 0, 12/2010

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