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| inchange semiconductor isc product specification isc silicon npn power transistor BD313 description excellent safe operating area dc current gain-h fe = 25(min.)@i c = 4a collector-emitter saturation voltage- : v ce(sat )= 1.0 v(max)@ i c = 5a complement to type bd314 applications designed for high quality amplifiers operating up to 60 watts into 4 ohm load. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 10 a i cm collector current-peak 20 a i b b base current-continuous 4 a p c collector power dissipation@t c =25 115 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.52 /w isc website www.iscsemi.cn 1
inchange semiconductor isc product specification isc silicon npn power transistor BD313 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c =200ma ; i b =0 80 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 1.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.5a b 1.8 v v be( on ) base-emitter on voltage i c = 4a; v ce = 4v 1.5 v i cbo collector cutoff current v cb = 80v; i b =0 b 1.0 ma i ebo emitter cutoff current v eb = 7.0v; i c =0 1.0 ma h fe-1 dc current gain i c = 4a; v ce = 4v 25 h fe-2 dc current gain i c = 10a; v ce = 4v 5 f t current gain-bandwidth product i c = 0.5a ; v ce = 10v;f=1.0mhz 4 mhz isc website www.iscsemi.cn 2 |
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