smd type ic www.kexin.com.cn 1 smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source 500v n-channel mosfet KQB2N50 features 2.1a, 500 v. r ds(on) =5.3 @v gs =10v low gate charge (typical 6.0nc) low crss(typical 4.0pf) fast switching 100% avalanche tested lmproved dv/dt capability absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 500 v drain current continuous (t c =25 ) 2.1 a drain current continuous (t c =100 ) 1.33 a drain current pulsed *1 i dm 8.4 a gate-source voltage v gss 30 v single pulsed avalanche energy*2 e as 120 mj avalanche current *1 i ar 2.1 a repetitive avalanche energy *1 e ar 5.5 mj peak diode recovery dv/dt *3 d v /d t 4.5 v/ns power dissipation @ t a =25 p d 3.13 w power dissipation @ t c =25 55 w derate above 25 0.44 w/ operating and storage temperature t j ,t stg -55 to150 maximum lead temperature for soldering purposes,1/8" from case for 5 seconds t l 300 thermal resistance junction to case r jc 2.27 /w thermal resistance junction to ambient *4 r ja 40 /w thermal resistance junction to ambient r ja 62.5 /w *1 repetitive rating:pulse width limited by maximum junction temperature *2 l=50mh,i as =2.1a,v dd =50v,r g =25 ,startion t j =25 *3 i sd 2.1a,d i /d t 200a/ s,v dd b vdss ,startiong t j =25 *4 when mounted on the minimum pad size recommended (pcb mount) i d p d
www.kexin.com.cn 2 smd type ic smd type transistors KQB2N50 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage b vdss v gs =0v,i d = 250 a 500 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 0.48 mv/ v ds =500v,v gs =0v 1 a v ds =400v,t c =125 10 a gate-body leakage current,forward i gssf v gs =30v,v ds =0v 100 na gate-body leakage current,reverse i gssr v gs =-30 v, v ds =0v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 3.0 5.0 v static drain-source on-resistance r ds(on) v gs =10v,i d = 1.05a 4.2 3.7 forward transconductance g fs v ds =50v,i d = 1.05a * 1.45 s input capacitance c iss 180 230 pf output capacitance c oss 30 40 pf reverse transfer capacitance c rss 46pf turn-on delay time t d(on) 620ns turn-on rise time tr 25 60 ns turn-off delay time t d(off) 10 30 ns turn-off fall time t f 20 50 ns total gate charge q g 6.0 8.0 nc gate-source charge q gs 1.3 nc gate-drain charge q gd 3.0 nc maximum continuous drain-source diode forwrad current i s 2.1 a maximum pulsed drain-source diode forward current i sm 8.4 a drain-source diode forward voltage v sd v gs =0v,i s =2.1a* 1.4 v diode reverse recovery time trr 195 ns diode reverse recovery current qrr 0.69 c * pulse test: pulse width 300 s, duty cycle 2.0% v gs =0v,d if /d t = 100 a/ s,i s =2.1a i dss zero gate voltage drain current v ds =400v,i d =2.1a,v gs =10v* v dd =250v,i d = 2.1a,rg=25 * v ds =25v,v gs =0v,f=1.0mhz
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