? semiconductor components industries, llc, 2012 september, 2012 ? rev. 2 1 publication order number: ntb5860n/d ntb5860n, NTP5860N, nvb5860n n-channel power mosfet 60 v, 220 a, 3.0 m features ? low r ds(on) ? high current capability ? 100% avalanche tested ? these devices are pb ? free, halogen free and are rohs compliant ? nvb prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage ? continuous v gs 20 v continuous drain current, r jc steady state t c = 25 c i d 220 a t c = 100 c 156 power dissipation, r jc steady state t c = 25 c p d 283 w pulsed drain current t p = 10 s i dm 660 a current limited by package i dmmax 130 a operating and storage temperature range t j , t stg ? 55 to +175 c source current (body diode) i s 130 a single pulse drain ? to ? source avalanche energy (l = 0.3 mh) e as 735 mj lead temperature for soldering purposes (1/8 from case for 10 seconds) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? case (drain) steady state r jc 0.53 c/w junction ? to ? ambient ? steady state (note 1) r ja 28 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 sq in pad size, (cu area 1.127 sq in [2 oz] including traces). http://onsemi.com to ? 220ab case 221a style 5 1 2 3 4 marking diagrams & pin assignments g = pb ? free device a = assembly location* y = year ww = work week ntp 5860ng ayww 1 gate 3 source 4 drain 2 drain 1 gate 3 source 4 drain 2 drain 1 2 3 4 d 2 pak case 418b style 2 ntb 5860ng ayww see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 60 v 3.0 m @ 10 v r ds(on) max i d max v (br)dss 220 a g s n ? channel mosfet d *could be one or two digit alpha or numeric code
ntb5860n, NTP5860N, nvb5860n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) characteristics symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j i d = 250 a 5.0 mv/ c zero gate voltage drain current i dss v gs = 0 v v ds = 60 v t j = 25 c 1.0 a t j = 125 c 100 gate ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 2.0 4.0 v threshold temperature coefficient v gs(th) /t j ? 10.1 mv/ c drain ? to ? source on ? resistance r ds(on) v gs = 10 v, i d = 75 a 2.5 3.0 m forward transconductance g fs v ds = 15 v, i d = 30 a 38 s charges, capacitances & gate resistance input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1 mhz 10760 pf output capacitance c oss 1125 transfer capacitance c rss 700 total gate charge q g(tot) v gs = 10 v, v ds = 48 v, i d = 65 a 180 nc threshold gate charge q g(th) 11 gate ? to ? source charge q gs 45 gate ? to ? drain charge q gd 57 switching characteristics, v gs = 10 v (note 3) turn ? on delay time t d(on) v gs = 10 v, v dd = 48 v, i d = 65 a, r g = 2.5 27 ns rise time t r 117 turn ? off delay time t d(off) 66 fall time t f 150 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v i s = 20 a t j = 25 c 0.76 1.1 v dc t j = 125 c 0.63 reverse recovery time t rr v gs = 0 v, i s = 65 a, di s /dt = 100 a/ s 55 ns charge time t a 29 discharge time t b 26 reverse recovery stored charge q rr 76 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntb5860n, NTP5860N, nvb5860n http://onsemi.com 3 typical characteristics 0 50 100 150 200 250 012345 figure 1. on ? region characteristics v ds , drain ? to ? source voltage (v) i d , drain current (a) 5.0 v v gs = 10 v 5.5 v 4.5 v t j = 25 c 0 50 100 150 200 250 300 350 23 45 6 v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c figure 2. transfer characteristics v gs , gate ? to ? source voltage (v) i d , drain current (a) 0.004 0.006 0.008 0.000 0.002 46810 figure 3. on ? resistance vs. gate voltage v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance ( ) i d = 20 a t j = 25 c 0.0020 0.0025 0.0030 0.0035 10 30 50 70 110 figure 4. on ? resistance vs. drain current i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) v gs = 10 v t j = 25 c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ? 50 ? 25 0 25 50 75 100 125 175 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) r ds(on) , drain ? to ? source resistance (normalized) v gs = 10 v i d = 20 a 1000 10000 100000 10 20 30 40 50 60 figure 6. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (v) i dss , leakage (na) t j = 125 c t j = 150 c v gs = 0 v 90 130 300 350 v gs = 6 v 0.0020 150 170 150
ntb5860n, NTP5860N, nvb5860n http://onsemi.com 4 typical characteristics 0 2000 4000 6000 8000 10000 14000 0 10203040 figure 7. capacitance variation v ds , drain ? to ? source voltage (v) c, capacitance (pf) t j = 25 c v gs = 0 v c iss c oss c rss 0 2 4 6 8 10 0 20 40 60 80 100 q gs q t q gd figure 8. gate ? to ? source vs. total charge q g , total gate charge (nc) v gs , gate ? to ? source voltage (v) v ds = 48 v i d = 65 a t j = 25 c 10 100 1000 1 10 100 figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) t, time (ns) v dd = 48 v i d = 65 a v gs = 10 v t d(off) t d(on) t r t f 0 20 40 60 80 100 0.60 0.70 0.80 1.00 0.90 1.10 figure 10. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) i s , source current (a) t j = 25 c v gs = 0 v 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain ? to ? source voltage (v) i d , drain current (a) figure 11. maximum rated forward biased safe operating area r ds(on) limit thermal limit package limit v gs = 10 v single pulse t c = 25 c 10 s 100 s 10 ms dc 1 ms 120 140 160 180 12000 120 140 160 180
ntb5860n, NTP5860N, nvb5860n http://onsemi.com 5 typical characteristics 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 figure 12. thermal response t, pulse time (s) r jc(t) ( c/w) effective transient thermal resistance 0.02 0.2 0.01 0.05 duty cycle = 0.5 single pulse 0.1 10 0.01 0.001 ordering information device package shipping ? NTP5860Ng to ? 220ab (pb ? free) 50 units / rail ntb5860nt4g d 2 pak (pb ? free) 800 / tape & reel nvb5860nt4g* d 2 pak (pb ? free) 800 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *nvb prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable.
ntb5860n, NTP5860N, nvb5860n http://onsemi.com 6 package dimensions d 2 pak case 418b ? 04 issue j seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 2: pin 1. gate 2. drain 3. source 4. drain
ntb5860n, NTP5860N, nvb5860n http://onsemi.com 7 package dimensions to ? 220 case 221a ? 09 issue af style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntb5860n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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