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| inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDW44 description collector-emitter sustaining voltage- : v ceo(sus) = -45v(min) high dc current gain : h fe = 1000(min) @i c = -5a low collector saturation voltage : v ce(sat) = -2.0v(max.)@ i c = -5.0a = -3.0v(max.)@ i c = -10a complement to type bdw39 applications designed for general purpose and low speed switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -45 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current-continuous -15 a i b b base current-continuous -0.5 a p c collector power dissipation @ t c =25 85 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.47 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor BDW44 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = -30ma; i b = 0 -45 v v ce( sat )-1 collector-emitter saturation voltage i c = -5a; i b = -10ma b -2.0 v v ce( sat )-2 collector-emitter saturation voltage i c = -10a; i b = -50ma -3.0 v v be( on ) base-emitter on voltage i c = -10a ; v ce = -4v -3.0 v i cbo collector cutoff current v cb = -45v; i e = 0 -1.0 ma i ceo collector cutoff current v ce = -22.5v; i b = 0 b -2.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -2.0 ma h fe-1 dc current gain i c = -5a ; v ce = -4v 1000 h fe-2 dc current gain i c = -10a ; v ce = -4v 250 f t current-gain?bandwidth product i c = -3a; v ce = -3v; f test = 1mhz 4 mhz c ob output capacitance i e = 0; v cb = -10v; f test = 0.1mhz 300 pf isc website www.iscsemi.cn 2 |
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