CPH5808 no.7770-1/6 features ? composite type with a n-channel silicon mosfet (mch3409) and a schottky barrier diode (sbs004) contained in one package facilitating high-density mounting. ? [mos] ? low on-resistance ? ultrahigh-speed switching ? low voltage drive ? [sbd] ? short reverse recovery time ? low forward voltage specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss 20 v gate-to-source voltage v gss 10 v drain current (dc) i d 2.0 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 8.0 a allowable power dissipation p d mounted on a ceramic board (600mm 2 5 0.8mm) 1unit 0.9 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 15 v nonrepetitive peak reverse surge voltage v rsm 15 v average output current i o 1a surge forward current i fsm 50hz sine wave, 1cycle 10 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7770 gi im 31504 ts im ta-100106 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. CPH5808 mosfet : n-channel silicon mosfet sbd : schottky barrier diode dc / dc converter applications
CPH5808 no.7770-2/6 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =1a 2.4 3.5 s static drain-to-source on-state resistance r ds (on)1 i d =1a, v gs =4v 100 130 m w r ds (on)2 i d =0.5a, v gs =2.5v 130 180 m w input capacitance ciss v ds =10v, f=1mhz 190 pf output capacitance coss v ds =10v, f=1mhz 40 pf reverse transfer capacitance crss v ds =10v, f=1mhz 25 pf turn-on delay time t d (on) see specified test circuit. 9 ns rise time t r see specified test circuit. 25 ns turn-off delay time t d (off) see specified test circuit. 25 ns fall time t f see specified test circuit. 18 ns total gate charge qg v ds =10v, v gs =4v, i d =2a 2.7 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =2a 0.6 nc gate-to-drain miller charge qgd v ds =10v, v gs =4v, i d =2a 0.6 nc diode forward voltage v sd i s =2a, v gs =0 0.87 1.2 v [sbd] reverse voltage v r i r =1ma 15 v forward voltage v f 1i f =0.5a 0.30 0.35 v v f 2i f =1a 0.35 0.40 v reverse current i r v r =6v 500 m a interterminal capacitance c v r =10v, f=1mhz cycle 42 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit 15 ns thermal resistance rth(j-a) mounted on a ceramic board (900mm 2 5 0.8mm) 110 c / w marking : qj package dimensions electrical connection unit : mmm 2171 543 12 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode top view 1.6 0.6 0.6 2.8 0.2 2.9 0.05 0.4 0.95 0.2 0.9 0.7 0.15 0.4 12 3 4 5 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode sanyo : cph5
CPH5808 no.7770-3/6 pw=10 m s d.c. 1% p. g 50 w g s d i d =1a r l =10 w v dd =10v v out CPH5808 (mosfet) v in 0v 4v v in switching time test circuit t rr test circuit [mosfet] [sbd] duty 10% 50 w 100 w 10 w --5v t rr 100ma 100ma 10ma 10 m s 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it02687 300 250 200 150 100 50 0 01234 5678910 r ds (on) -- v gs ta=25 c it02689 ambient temperature, ta -- c r ds (on) -- ta it02690 i d =0.5a, v gs =2.5v i d =1.0a, v gs =4.0v --60 0 250 200 150 100 50 --40 --20 0 20 40 60 80 100 120 160 140 0 0.4 0.8 1.2 1.6 2.0 0 2.5 2.0 1.5 1.0 0.5 3.0 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a v ds =10v ta=75 c ta=25 c it02688 25 c 75 c 1.0a i d =0.5a v gs =1.5v 2.0v 6.0v 4.0v 3.0v 2.5v --25 c --25 c static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w [mosfet] [mosfet] [mosfet] [mosfet] gate-to-source voltage, v gs -- v
CPH5808 no.7770-4/6 0 0 1 2 3 4 123 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v v ds =10v i d =2a it07115 amibient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it07117 a s o drain-to-source voltage, v ds -- v drain current, i d -- a it07116 0.1 1.0 2 3 5 7 0.01 2 3 5 7 10 2 2 3 5 7 0.01 23 57 0.1 23 57 7 1.0 10 23 23 5 <10 m s 100 m s operation in this area is limited by r ds (on). i d =2a dc operation i dp =8a 1ms 10ms 100ms ta=25 c single pulse mounted on a ceramic board (600mm 2 5 0.8mm) 0 0 20 40 60 80 100 120 1.0 0.9 0.8 0.6 0.4 0.2 1.2 140 160 mounted on a ceramic board(600mm 2 5 0.8mm) 1unit 0 5 10 15 20 0.01 7 5 3 2 0.1 7 5 3 2 1.0 7 5 3 2 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 1000 100 7 5 3 2 7 5 3 2 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf f=1mhz ciss coss crss it02694 drain current, i d -- a switching time, sw time -- ns it02693 drain current, i d -- a it02691 0.01 0.1 23 57 1.0 23 57 23 5 10 1.0 7 5 3 2 7 5 3 2 forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d v ds =10v 75 c ta= --25 c it02692 diode forward voltage, v sd -- v forward current, i f -- a i f -- v sd v gs =0 --25 c 25 c ta=75 c 25 c 1.0 0.1 23 57 1.0 23 5 100 7 5 3 2 7 5 3 2 10 v dd =10v v gs =4v t d (on) t d (off) t r t f sw time -- i d [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet]
CPH5808 no.7770-5/6 reverse voltage, v r -- v c -- v r interterminal capacitance, c -- pf f=1mhz 0 100 10 1.0 0.1 0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 15 510 reverse voltage, v r -- v i r -- v r reverse current, i r -- ma 0 0 0.2 0.4 0.6 0.8 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.0 1.2 1.4 average forward current, i o -- a p f (av) -- i o average forward power dissipation, p f (av) -- w 0 0.1 0.01 0.3 0.4 0.5 0.1 0.2 1.0 3 2 7 5 3 2 7 5 3 2 forward voltage, v f -- v forward current, i f -- a i f -- v f ta=125 c 25 c 50 c 75 c 100 c ta=125 c 25 c 50 c 75 c 100 c it00622 it00623 it00624 [sbd] [sbd] [sbd] [sbd] (1) rectangular wave q =60 (2) rectangular wave q =120 (3) rectangular wave q =180 (4) sine wave q =180 180 360 q 360 rectangular wave (1) (2) (4) (3) sine wave 1.0 10 2 2 100 3 10 2 3 5 7 357 2 it07194 7 0.01 23 7 0.1 0 52 2 37 1.0 5 12 10 8 6 4 2 3 time, t -- s surge forward current, i fsm (peak) -- a it00626 [sbd] is 20ms t current waveform 50hz sine wave i fsm -- t
CPH5808 no.7770-6/6 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2004. specifications and information herein are subject to change without notice. ps
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