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| inchange semiconductor isc product specification isc silicon npn power transistor BDY26 description collector-emitter breakdown voltage- : v (br)ceo = 180v(min.) collector-emitter saturation voltage- : v ce(sat )= 0.6v(max)@ i c = 2a high switching speed applications designed for lf signal powe amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 180 v v ebo emitter-base voltage 10 v i c collector current-continuous 6 a i b b base current 3 a p c collector power dissipation@t c =25 87.5 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.0 /w isc website www.iscsemi.cn 1
inchange semiconductor isc product specification isc silicon npn power transistors BDY26 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 180 v v (br)cbo collector-base breakdown voltage i c = 3ma; i e = 0 300 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.25a b 0.6 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 0.25a b 1.2 v i ces collector cutoff current v ce = 250v; v be = 0 1.0 ma i ceo collector cutoff current v ce = 180v; i b = 0 1.0 ma i ebo emitter cutoff current v eb = 10v; i c = 0 1.0 ma h fe dc current gain i c = 2a; v ce = 4v 15 100 f t current gain-bandwidth product i c = 0.5a; v ce = 15v; f=10mhz 10 mhz switching times t on turn-on time i c = 5a; i b = 1a b 0.5 s t off turn-off time i c = 5a; i b1 = 1a; i b2 = -0.5a 2.0 s ? h fe classifications a b c 15-45 30-90 75-100 isc website www.iscsemi.cn 2 |
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