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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD750 description collector-emitter breakdown voltage- : v (br)ceo = 80v (min) wide area of safe operation high current capability applications designed for af high power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 110 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 30 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD750 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 80 v v (br)ebo emitter-base breakdown voltage i e = 5ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 2.0 v v be (on) base-emitter on voltage i c = 5a; v ce = 4v 1.5 v i cbo collector cutoff current v cb = 40v; i e = 0 30 a h fe-1 dc current gain i c = 1a; v ce = 4v 40 h fe-2 dc current gain i c = 5a; v ce = 4v 30 120 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 1 mhz ? h fe- 2 classifications q p o 30-60 40-80 60-120 isc website www.iscsemi.cn |
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