smd type transistors 1 www.kexin.com.cn small signal transistor 2SC3444 features high voltage v ceo =60v. high collector current (ic=1a). high collector dissipation pc=500mw. low v ce(sat): v ce(sat) =0.11v typ(@ic=500ma,i b =25ma). small package for mounting. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v emitter-base voltage v ebo 6v collector-emitter voltage v ceo 60 v peak collector current i cm 2a collector current i c 1a collector dissipation (ta=25 ) p c 500 mw jumction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit colllector-base breakdown voltage v (br)cbo i c =10a,i e =0 60 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 6 v collector-emitter breakdown voltage v (br)ceo i c =2ma,r be = 60 v collector cutoff current i cbo v cb =50v,i e =0 0.2 a emitter cutoff current i ebo v eb =4v,i c =0 0.2 a dc current gain h fe v ce =4v,i c =100ma 55 300 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =25ma 0.11 0.3 v gain bandwidth product f t v ce =2v,i e =-10ma 80 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 14 pf h fe classification marking dc dd de hfe 55 110 90 180 150 300
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