e l ek tr on isch e b a u e lemen te SMG138K 640ma , 5 0v ,r ds(on) 2 n-channel enhancement mode power mos.fet the smg 138k is universally used for all commercial the smg 138k utilized advanced processing absolute maximum ratings d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e c o n t i n u o u s d r a i n c u r r e n t , v g s @ 4 . 5 v c o n t i n u o u s d r a i n c u r r e n t , v g s @ 4 . 5 v p u l s e d d r a i n c u r r e n t [ d e s c r i p t i o n t e c h n i q u e s t o a c h i e v e t h e l o w e s t p o s s i b l e o n - r e s i s t a n c e e x t r e m e l y e f f i c i e n t a n d c o s t - e f f e c t i v e n e s s d e v i c e . f e a t u r e s * s i m p l e d r i v e r e q u i r e m e n t * s m a l l p a c k a g e o u t l i n e t o t a l p o w e r d i s s i p a t i o n l i n e a r d e r a t i n g f a c t o r o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e p a r a m e t e r s y m b o l r a t i n g s u n i t t h e r m a l d a t a p a r a m e t e r s y m b o l r a t i n g s u n i t t h e r m a l r e s i s t a n c e j u n c t i o n - a m b i e n t 3 m a v v m a m a i d @ t a = 7 0 / w c w / c c w v d s v g s i d @ t a = 2 5 i d m p d @ t a = 2 5 t j , t s t g r t h j - a 5 0 2 0 9 5 0 6 4 0 5 0 0 1 . 3 8 0 . 0 1 - 5 5 ~ + 1 5 0 9 0 d i m m i n m a x a 2 . 7 0 3 . 1 0 b 1 . 4 0 1 . 6 0 c 1 . 0 0 1 . 3 0 d 0 . 3 5 0 . 5 0 g 1 . 7 0 2 . 1 0 h 0 . 0 0 0 . 1 0 j 0 . 1 0 0 . 2 6 k 0 . 2 0 0 . 6 0 l 0 . 8 5 1 . 1 5 s 2 . 4 0 2 . 8 0 a l l d i m e n s i o n i n m m s c - 5 9 o o o c o c o c o 3 3 1 , 2 s g d b l a 1 3 2 top view h c j k gate source drain d g s marking : 138e industrial application 01 -jun-2002 rev. a page 1 of 4 * ro hs compliant product http://www.secosgmbh.com/ any changing of specification will not be informed individual
e l ek tr on isch e b a u e lemen te smg138 k 640ma, 50v,r ds(on) 2 n-channel enhancement mode power mos.fet e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) t o t a l g a t e c h a r g e r d s ( o n ) h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e b r e a k d o w n v o l t a g e t e m p . c o e f f i c i e n t g a t e t h reshold voltage g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c drain-source on-resistance d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 7 0 ) g a t e - s o u r c e c h a r g e g a t e - d r a i n ( " m i l l e r " ) c h a r g e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e b v d s s b v d s / t j v g s ( t h ) i g s s i d s s c r s s q g q g s q g d t d ( o n ) t d ( o f f ) t r c i s s c o s s t f 5 0 0 . 0 6 0 . 5 2 . 0 1 0 1 1 0 0 2 4 1 0 . 5 0 . 5 1 2 1 0 5 6 2 9 3 2 8 6 v v / v n a u a u a n c n s p f [ v g s = 0 v v d s = 2 5 v f = 1 . 0 m h z v d d = 3 0 v i d = 0 . 6 a v g s = 1 0 v r g = 3 . 3 r d = 5 2 [ [ i d = 0 . 6 a v d s = 5 0 v v g s = 4 . 5 v v g s = 1 0 v , i d = 0 . 5 a v g s = 4 . 5 v , i d = 0 . 4 a v g s = 0 v , i d = 2 5 0 u a v g s = 2 0 v v d s = 5 0 v , v g s = 0 v d s = 4 0 v , v g s = 0 v d s = v g s , i d = 1 m a r e f e r e n c e t o 2 5 , i d = 1 m a _ _ _ s o u r c e - d r a i n d i o d e _ _ _ _ _ _ _ p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t f o r w a r d o n v o l t a g e v s d _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ i s = 0 . 2 a , v g s = 0 v . v 1 . 2 n o t e s : 1 . p u l s e w i d t h l i m i t e d b y m a x . j u n c t i o n t e m p e r a t u r e . 2 . p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . ?? ?? 2 3 . s u r f a c e m o u n t e d o n 1 i n c h 2 c o p p e r p a d o f f r 4 b o a r d ; 2 7 0 o c / w w h e n m o u n t e d o n m i n . c o p p e r p a d . f o r w a r d t r a n s c o n d u c t a n c e g f s m s 6 0 0 v d s = 1 0 v , i d = 0 . 6 a _ _ _ 5 0 1 . 6 o c o c o c o c o 2 2 2 [ 01-jun-2002 rev. a page 2 of 4
e l ek tr on isch e b a u e lemen te SMG138K 640ma, 50v,r ds(on) 2 n-channel enhancement mode power mos.fet [ 01-jun-2002 rev. a page 3 of 4 fig 5. forward characteristics of reverse diode fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 6. gate threshold voltage v.s. junction temperature http://www.secosgmbh.com/ any changing of specification will not be informed individual c h a r a c t e r i s t i c s c u r v e
e l ek tr on i s ch e b a u e l e men te SMG138K 640ma, 50v,r ds(on) 2 n-channel enhancement mode power mos.fet [ 01 -jun-2002 rev. a page 4 of 4 f i g 9. m ax i m u m s af e o p e r at i n g a r e a f i g 10. e f f e c t i ve t r an s i e n t t h e r m a l i m p e d an c e f i g 7. g a t e c h ar ge c h ar ac t e r i s t i c s f i g 8. t yp i c al c ap ac i t an c e c h ar ac t e r i s t i c s f i g 1 1. t r an s f e r c h a r ac t e r i s t i c s f i g 12. g a t e c h ar ge w ave f o r m http://www.secosgmbh.com/ any changing of specification will not be informed individual
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