document number: 89318 for technical questions within your region, please contact one of the following: www.vishay.com revision: 10-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 surface mount trench mos barrier schottky rectifier VSSC520S vishay general semiconductor new product features ? low profile package ? ideal for automated placement ? trench mos schottky technology ? low power losses, high efficiency ? low forward voltage drop ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in high frequency converters, freewheeling diodes, dc/dc converters and polarity protection applications. mechanical data case: do-214ab (smc) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-fr ee and rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end notes (1) units mounted on pcb with 25 mm x 25 mm copper pad areas, 1 oz. fr4 pcb (2) free air, mounted on recommended pcb 1 oz. pad area primary characteristics i f(av) 5.0 a v rrm 200 v i fsm 100 a v f at i f = 5.0 a 0.67 v t j max. 150 c do-214ab (smc) tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol VSSC520S unit device marking code v5d maximum repetitive pe ak reverse voltage v rrm 200 v maximum dc forward current i f (1) 5.0 a i f (2) 2.2 peak forward surge current 10 ms single ha lf sine-wave superimposed on rated load i fsm 100 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 89318 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 10-nov-10 VSSC520S vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms notes (1) free air, mounted on recommended pcb 1 oz. pad area; thermal resistance r ? ja - junction to ambient (2) units mounted on pcb with 25 mm x 25 mm copper pad areas; thermal resistance r ? jm - junction to mount ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 5.0 a t a = 25 c v f (1) 1.19 1.70 v t a = 125 c 0.67 0.75 reverse current per diode v r = 180 v t a = 25 c i r (2) 2.0 - a t a = 125 c 2.0 - ma v r = 200 v t a = 25 c 4 200 a t a = 125 c 3.2 25 ma typical junction capacitance 4.0 v, 1 mhz c j 280 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol VSSC520S unit typical thermal resistance r ? ja (1) 95 c/w r ? jm (2) 9 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode VSSC520S-m3/57t 0.235 57t 850 7" diam eter plastic tape and reel VSSC520S-m3/9at 0.235 9at 3500 13" di ameter plastic tape and reel 0 25 50 75 100 125 6 175 t m - mo u nt temperat u re (c) a v erage for w ard rectified c u rrent (a) 1 0 t m meas u red at terminal 2 4 3 5 150 0 5.5 0 4.5 a v erage for w ard c u rrent (a) a v erage po w er loss (w) 1.5 1.0 0.5 5.0 4.5 4.0 3.5 3.0 2.5 0.5 d = t p /t t p t d = 0.1 d = 0.5 d = 0. 8 d = 1.0 3.5 3.0 2.5 2.0 d = 0.3 d = 0.2 2.0 1.5 1.0 4 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 89318 for technical questions within your region, please contact one of the following: www.vishay.com revision: 10-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 VSSC520S vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 1 100 0 0.1 instantaneo u s for w ard voltage (v) instantaneo u s for w ard c u rrent (a) t a = 125 c t a = 25 c t a = 100 c t a = 150 c 10 0.2 0.4 0.6 0. 8 1.0 1.2 1.6 1.4 10 20 40 60 0.0001 0.001 0.01 0.1 1 100 8 0 100 percent of rated peak re v erse voltage (%) t a = 125 c t a = 25 c t a = 100 c t a = 150 c 30 50 70 90 instantaneo u s re v erse c u rrent (ma) 10 100 10 10 100 1000 0.1 1 re v erse voltage (v) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 100 10 1 100 1000 0.01 1 t - p u lse d u ration (s) transient thermal impedance (c/w) 10 0.1 j u nction to am b ient cathode band do-214ab ( s mc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pa d layout 0.126 (3.20) min. 0.060 (1.52) min. 0.185 (4.69) max. 0.320 (8.13) ref. www.datasheet.co.kr datasheet pdf - http://www..net/
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