s i 942 4 dy s i9 424 dy re v . a si 94 24 dy single p-channel 2.5v specified power t renc h a mosfet general description this p-channel 2.5v specified mosfet is produced using fairchild semiconductor's advanced powertrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. applications ? dc/dc converter ? load switch ? battery protection ja nu ar y 20 01 features ? -8.0 a, -20 v . r ds(on) = 0.024 w @ v gs = -4.5 v r ds(on) = 0.032 w @ v gs = -2.5 v . ? low gate charge (23nc typical). ? fast switching speed. ? high performance trench technology for extremely low r ds(on) . ? high power and current handling capabilit y . ? 20 01 fairchild semiconductor int ern ational absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-sour c e voltage -20 v v g s s ga t e - s our c e v o l t age 1 0 v i d drain current - continuous (note 1a) -8 . 0 a - pul s ed -50 p d power di s s ipation for single operation (note 1a) 2.5 w (note 1b) 1.2 (note 1c) 1 t j , t stg operating and storage j un c tion temperature range -55 to +150 c thermal characteristics r q ja thermal re s i s tan c e, j un c tion-to-ambient (note 1a) 50 c / w r q jc thermal re s i s tan c e, j un c tion-to-ca s e (note 1) 25 c / w package outlines and ordering information device marking device reel size tape width quantity 94 24 si9424dy 13 12mm 2500 units s d s s so-8 d d d g 5 6 8 3 1 7 4 2
s i9 424 dy si9424dy re v . a electr i cal characteristics t a = 25c unle s s otherwise noted sy mbol parameter test c o nditions min t y p ma x units off ch a racteristics bv dss drain-sou r c e brea k down volt a g e v gs = 0 v, i d = -250 m a - 2 0 v d bv dss d t j brea k dow n voltage temperat u re coeffi c ient i d = -250 m a, r efe r e n ced to 25 c - 2 4 m v / c i dss zero gat e voltage drain curr e nt v ds = -16 v, v gs = 0 v -1 m a i gssf gate-body lea k age current, forward v gs = 1 0 v, v ds = 0 v 100 na i gssr gate-bod y lea k a g e current , r e v e r s e v gs = - 10 v, v ds = 0 v -100 na on cha r acteristics (note 2) v gs(th) gate thr e s hold voltage v ds = v gs , i d = -250 m a -0.4 -0.8 -1.5 v d v gs(th) d t j gate thr e s hold voltage temperat u re coeffi c ient i d = -250 m a, r efe r e n ced to 25 c 5 m v / c r ds(on) static drain-sour c e on-re s i s t a n c e v gs = - 4.5 v, i d = -8 a v gs = - 4.5 v, i d = - 8 a , t j =125 c v gs = - 2.5 v, i d = -7 a 0.019 0.026 0.027 0.024 0.039 0.032 w i d(on) on-state d rain current v gs = - 4.5 v, v ds = - 5.0 v - 50 a g fs forward tran s c on d u c tan c e v ds = - 5 v, i d = -8 a 28 s dynami c characteristi c s c iss input cap a c itan c e 2260 pf c oss output c a pa c itan c e 500 pf c rss re v e r s e tran s fer capa c itan c e v ds = -10 v, v gs = 0 v, f = 1.0 m h z 205 pf switching characterist i cs (note 2) t d(on) turn-on d e lay time 8 1 6 n s t r turn-on r ise time 15 27 ns t d(o f f ) turn-off d elay time 98 135 ns t f turn-off fall time v dd = -10 v, i d = -1 a, v gs = - 4.5 v, r ge n = 6 w 35 55 ns q g total gat e charge 23 33 nc q gs gate-sou r c e charge 5.5 n c q gd gate-drai n charge v ds = -10 v, i d = -8 a, v gs = -5 v, 4 n c drain-source diode characteristics and maximum ratings i s ma x imum continuous drain-s o ur c e diode forwar d current -2.1 a v sd drain-sou r c e diode forward voltage v gs = 0 v, i s = - 2.1 a (note 2) -0.75 -1.2 v notes: 1 : r q ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mo u nting surface of the drain pins. r q jc is guaranteed by design while r q ja is determined by the user's board design. scale 1 : 1 on letter size paper 2: pulse t est: pulse widt h 300 m s, duty cycl e 2.0% a) 5 0 c/w when mounted on a 0.5 in 2 pad of 2 oz. coppe r . b) 105 c/w when mounted on a 0.02 in 2 pad of 2 oz. coppe r . c) 12 5 c/w when mounted on a 0.003 in 2 pad of 2 oz. coppe r .
s i9 42 4 dy si9424dy re v . a t ypical characteristics figure 1. on-region characteristics. figur e 2 . on-resistanc e v ariation with drain current and gate v oltage. figur e 5 . t ransfe r characteristics. figure 6. body diode forward v oltage v ariation with source current and t emperature. figure 3. on-resistance v ariation with t emperature. figure 4. on-resistance v ariation with gate-to-source v oltage. 0 . 5 1 1 . 5 2 2 . 5 0 1 0 2 0 3 0 4 0 5 0 - i d , d r a i n c u r r e n t ( a) r d s(o n ) , no r mal ize d d r a i n -sou r c e on -r e s i s t a n c e v g s = -2 . 5v -3 . 0v -3 . 5v -4 . 5v 0 . 0001 0 . 001 0 . 01 0 . 1 1 10 100 0 0 . 2 0 . 4 0 . 6 0 . 8 1 1 . 2 -v s d , b o dy d i o d e v o lt a g e ( v ) -i s , re v e r s e drai n c urre nt ( a ) t j = 125 o c 25 o c -55 o c v g s = 0 0 0.02 0.04 0.06 0.08 0.1 1 1.5 2 2.5 3 3.5 4 4.5 5 - v g s , g a te t o so u r c e volt a ge ( v) r ds ( o n) , on r esi st a n c e ( o h m ) i d = - 4a t j = 125 o c 25 o c 0 4 8 12 16 20 0 . 51 1 . 52 2 . 5 -v g s , g a t e t o so u r c e vo l t a g e (v) -i d , d rai n cu rr e n t ( a ) v d s = -5v t j = -55 o c 25 o c 125 o c 0 10 20 30 40 50 01 2 345 - v d s , d rai n to s ou r c e v oltag e ( v ) -i d , d rai n c urr e n t ( a ) v g s = - 4 . 5 v - 3 . 5v - 2 . 5v - 2 . 0v - 1 . 5v 0.6 0.8 1 1.2 1.4 1.6 - 5 0 - 25 0 2 5 5 0 7 5 100 125 150 t j , j un c t i o n t em p era t u re ( o c) r ds ( o n) , n o rm al i z e d d rai n- s o urc e o n -re s i s t anc e i d = - 8 a v g s = - 1 0v
s i9 424 dy si9424dy re v . a t ypical characteristics (continued) figure 7. gate charge characteristics. figure 8. capacitance characteristics. figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. figure 1 1. t ransient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient themal response will change depending on the circuit board design. 0 10 20 30 40 50 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 1 0 0 1 0 00 s i n gle p u ls e t i m e ( s e c ) power (w) s i n gl e p u l s e r q ja = 1 25 o c / w t a = 2 5 o c 0 . 0001 0 . 0 0 1 0 .01 0 . 1 1 1 0 100 300 0. 0 0 1 0. 0 0 2 0. 0 0 5 0 . 01 0 . 02 0 . 05 0 . 1 0 . 2 0 . 5 1 t , tim e ( s e c ) t rans ie nt t h e r m a l r e s i s t an ce r ( t ) , n o rm al i z e d ef f e ct i v e 1 s i n g l e p u l s e d = 0 . 5 0 . 1 0 . 05 0 . 02 0 . 01 0 . 2 d u t y c y c l e , d = t / t 1 2 r ( t ) = r ( t ) * r r = 125 c / w q ja q ja q ja t - t = p * r (t) q ja a j p ( p k ) t 1 t 2 0.01 0.1 1 10 100 0.1 1 10 100 - v ds , drain-sour c e volta g e (v) -i d , drain curre nt ( a ) v g s = -4.5v s i n g le pulse r q ja = 125 o c/w t a = 2 5 o c r ds ( o n ) li m it dc 1s 10s 100ms 10ms 100 m s 0 1 2 3 4 5 0 5 10 15 20 25 q g , g a te c h ar g e ( n c) -v gs , ga t e-so u r c e vo l t a ge (v) i d = -8 . 0a v d s = -5v -10v -15v 0 5 0 0 1 0 00 1 5 00 2 0 00 2 5 00 3 0 00 3 5 00 0 4 8 12 16 20 -v d s , dr a i n to s o u rce v o l t a g e ( v ) cap aa cit ance ( pf) f = 1 mhz v g s = 0 v c i s s c o s s c rss
soic(8lds) packaging configuration: figure 1.0 components leader tape 1680mm minimum or 210 empty pockets trailer tape 640mm minimum or 80 empty pockets soic(8lds) tape leader and trailer configuration: figure 2.0 cover tape carrier tape note/comments packaging option soic (8lds) packaging information standard (no flow code) l86z f011 packaging type reel size tnr 13" dia rail/tube - tnr 13" dia qty per reel/tube/bag 2,500 95 4,000 box dimension (mm) 343x64x343 530x130x83 343x64x343 max qty per box 5,000 30,000 8,000 d84z tnr 7" dia 500 184x187x47 1,000 weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 weight per reel (kg) 0.6060 - 0.9696 0.1182 f63tn label esd label 343mm x 342mm x 64mm standard intermediate box esd label f63tnr label sample f63tnlabel lot: cbvk741b019 fsid: fds9953a d/c1: d9842 qty1: spec rev: spec: qty: 2500 d/c2: qty2: cpn: n/f: f (f63tnr)3 f 852 nds 9959 soic-8 unit orientation f 852 nds 9959 pin 1 static dissipative embossed carrier tape f63tnr label antistatic cover tape esd label electrostatic sensitive devices do no t shi p or sto re n ear stro ng electrostatic electro magn eti c, mag netic o r r adio active fi eld s tnr date pt numb er peel stren gth min ___ __ ____ __ ___g ms max _____________ gms customized label packaging description: soic-8 parts are shipped in tape. the carrier tape is made from a dissipative (carbon filled) polycarbonate resin. the cover tape is a multilayer film (heat activated adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. these reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. the reels are dark blue in color and is made of polystyrene plastic (anti- static coated). other option comes in 500 units per 7" or 177cm diameter reel. this and some other options are further described in the packaging information table. these full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. one box contains two reels maximum. and these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. f 852 nds 9959 f 852 nds 9959 f 852 nds 9959 so i c -8 t ape and reel data july 1999, rev. b ?2000 fairchild semiconductor international
? 1998 fairchild semiconductor corporation dimensions are in millimeter pkg type a0 b0 w d 0 d1 e1 e2 f p1 p0 k0 t wc tc soic (8lds) (12mm) 6.50 +/-0.10 5.30 +/-0.10 12.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 10.25 min 5.50 +/-0.05 8.0 +/-0.1 4.0 +/-0.1 2.1 +/-0.10 0.450 +/- 0.150 9.2 +/-0.3 0.06 +/-0.02 p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 12mm 7" dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 12mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 see detail aa dim a max 13" diameter option 7" diameter option dim a max see detail aa w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 20 deg maximum component rotation 0.5mm maximum 0.5mm maximum sketch c (top view) component lateral movement typical component cavity center line 20 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed soic(8lds) embossed carrier tape configuration: figure 3.0 soic(8lds) reel configuration: figure 4.0 so ic -8 t ape and reel data, continued july 1999, rev. b
soic-8 (fs pkg code s1) 1 : 1 scale 1:1 on letter size paper di me n si o n s s h ow n be l ow a re in : inches [millimeters] part weight per unit (gram): 0.0774 soic-8 package dimensions september 1998, rev. a 9 ?2000 fairchild semiconductor international
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher smart start? supersot?-3 supersot?-6 supersot?-8 fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pacman? pop? rev. g ? acex? bottomless? coolfet? crossvolt ? dome? e 2 cmos tm ensigna tm fact? fact quiet series? fast syncfet? tinylogic? uhc? vcx? ? ?
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