august 2009 ?2009 fairchild semiconductor corporation FDMS6673BZ rev c 3 www.fairchildsemi.com 1 FDMS6673BZ p-channel powertrench ? mosfet FDMS6673BZ p-channel powertrench ? mosfet -30 v, -28 a, 6.8 m : features ? max r ds(on) = 6.8 m : at v gs = -10 v, i d = -15.2 a ? max r ds(on) = 12.5 m : at v gs = -4.5 v, i d = -11.2 a ? advanced package and silicon combination for low r ds(on) ? hbm esd protection level of 8 kv typical(note 3) ? msl1 robust package design ? rohs compliant general description the FDMS6673BZ has been designed to minimize losses in load switch applications. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) and esd protection. applications ? load switch in notebook and server ? notebook battery pack power management bottom power 56 top pin 1 g s s s d d d d g s s s d d d d 5 6 7 8 3 2 1 4 mosfet maximum ratings t c = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -30 v v gs gate to source voltage 25 v i d drain current -continuous (package limited) t c = 25 c -28 a -continuous (silicon limited) t c = 25 c -90 -continuous t a = 25 c (note 1a) -15.2 -pulsed -120 p d power dissipation t c = 25 c 73 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r t jc thermal resistance, junction to case 1.7 c/w r t ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS6673BZ FDMS6673BZ power 56 13 12 mm 3000 units www.datasheet.co.kr datasheet pdf - http://www..net/
www.fairch ildsemi.com 2 ?2009 fairchild semiconductor corporation FDMS6673BZ rev c 3 FDMS6673BZ p-channel powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic charac teristics switching characteristics drain-source diode characteristics sym bol parameter test cond itions min typ max units bv dss drain to so urce breakdown voltage i d = -250 p a, v gs = 0 v -30 v ' bv dss ' t j breakdown volt age temperature coefficient i d = -250 p a, referenc ed to 25 c -18 mv/c i dss zero gate voltag e drain current v ds = -24 v, v gs = 0 v -1 p a i gss gate to source leakage current v gs = 25 v, v ds = 0 v 10 v gs(th) gate to source threshold v oltage v gs = v ds , i d = -250 p a -1.0 -1.8 -3.0 v ' v gs(th) ' t j gate to source threshold v oltage temperature coefficient i d = -250 p a, referenced to 25 c 7 mv/c r ds(on) static drain to source on resistance v gs = -10 v , i d = -15.2 a 5.2 6.8 m : v gs = -4.5 v , i d = -11.2 a 7.8 12.5 v gs = -10 v, i d = -15.2 a, t j = 125 c 7.5 9.8 g fs forward transconduct ance v ds = -5 v, i d = -15.2 a 76 s c iss input capacit ance v ds = -15 v, v gs = 0 v, f = 1 mhz 4444 5915 pf c oss output capacitance 781 1040 pf c rss reverse transfer c apacitance 695 1045 pf r g gate resistance 4.5 : t d(on) turn-on de lay time v dd = -15 v, i d = -15.2 a, v gs = -10 v, r gen = 6 : 14 26 ns t r rise time 28 45 ns t d(off) turn-of f delay time 97 156 ns t f fall time 79 127 ns q g total gate charge v gs = 0 v to -10 v v dd = -15 v, i d = -15.2 a 93 130 nc q g total gate charge v gs = 0 v to -5 v 52 73 nc q gs gate to source charge 13 nc q gd gate to drain miller charge 2 6nc v sd source to drain diode forward v oltage v gs = 0 v, i s = -2.1 a (note 2) 0.7 1.20 v v gs = 0 v, i s = -15.2 a (note 2) 0.8 1.25 t rr reverse recovery time i f = -15.2 a, di/dt = 100 a/ p s 33 53 ns q rr reverse recovery charge 20 32 nc notes : 1: r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2: pulse test: pulse width < 300 p s, duty cycle < 2.0%. 3: the diode connected between the gate and source servers only as protection against esd. no gate overvoltage rating is implied. a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper. p a www.datasheet.co.kr datasheet pdf - http://www..net/
www.fairchildsemi.com 3 ?2009 fairchild semiconductor corporation FDMS6673BZ rev c 3 FDMS6673BZ p-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 01234 0 20 40 60 80 100 120 v gs = - 6 v v gs = -4 v v gs = -3.5 v v gs = - 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = -3 v v gs = - 10 v -i d , drain current (a) -v ds , drain to source voltage (v) on region characteristics figure 2. 0 20406080100120 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = -6 v v gs = -4 v normalized drain to source on-resistance -i d , drain current (a) v gs = -10 v v gs = -4.5 v v gs = -3.5 v v gs = -3 v pulse duration = 80 p s duty cycle = 0.5% max n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -15.2 a v gs = -10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 5 10 15 20 25 t j = 125 o c i d = -15.2 a t j = 25 o c -v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 012345 0 20 40 60 80 100 120 t j = 150 o c v ds = -5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.21.4 0.001 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current www.datasheet.co.kr datasheet pdf - http://www..net/
www.fairchildsemi.com 4 ?2009 fairchild semiconductor corporation FDMS6673BZ rev c 3 FDMS6673BZ p-channel powertrench ? mosfet figure 7. 0 20406080100 0 2 4 6 8 10 i d = -15.2 a v dd = 10 v v dd = 15 v -v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 20 v gate charge characteristics figure 8. 0.1 1 10 30 300 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 50 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) -i as , avalanche current (a) 200 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 20 40 60 80 100 v gs = 4.5 v limited by package r t jc = 1.7 o c/w v gs = 10 v -i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 200 100 us 10 s dc 100 ms 10 ms 1 ms 1 s -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c 200 figure 12. igss vs vgss 0 5 10 15 20 25 30 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 v gs = 0 v t j = 25 o c t j = 125 o c -v gs , gate to source voltage (v) -i g , gate leakage current (a) typical characteristics t j = 25 c unless otherwise noted www.datasheet.co.kr datasheet pdf - http://www..net/
www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation FDMS6673BZ rev c 3 FDMS6673BZ p-channel powertrench ? mosfet figure 13. single pulse maximum power dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 2000 v gs = -10 v p ( pk ) , peak transient power (w) t, pulse width (sec) single pulse r t ja = 125 o c/w t a = 25 o c figure 14. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.0004 0.001 0.01 0.1 1 2 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted www.datasheet.co.kr datasheet pdf - http://www..net/
www.fairchildsemi.com 6 ?2009 fairchild semiconductor corporation FDMS6673BZ rev c 3 FDMS6673BZ p-channel powertrench ? mosfet dimensional outline and pad layout www.datasheet.co.kr datasheet pdf - http://www..net/
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mosfet ?2009 fairchild semiconductor corporation 7 www.fairchildsemi.com FDMS6673BZ rev c3 www.datasheet.co.kr datasheet pdf - http://www..net/
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