document number: 67934 www.vishay.com s11-0959-rev. a, 06-jun-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 30 v (d-s) 175 c mosfet sq3456bev vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified c notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material). c. parametric verification ongoing. product summary v ds (v) 30 r ds(on) ( ? ) at v gs = 10 v 0.035 r ds(on) ( ? ) at v gs = 4.5 v 0.052 i d (a) 7.8 configuration single n-channel mosfet (3) g (1, 2, 5, 6) d (4) s tsop-6 top v iew 6 4 1 2 3 5 2.85 mm 3 mm marking code: 8lxxx ordering information package tsop-6 lead (pb)-free and halo gen-free SQ3456BEV-T1-GE3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 7.8 a t c = 125 c 4.5 continuous source curre nt (diode conduction) i s 5 pulsed drain current a i dm 31 single pulse avalanche current l = 0.1 mh i as 10 single pulse avalanche energy e as 5mj maximum power dissipation a t c = 25 c p d 4 w t c = 125 c 1.3 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 110 c/w junction-to-foot (drain) r thjf 38
www.vishay.com document number: 67934 2 s11-0959-rev. a, 06-jun-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sq3456bev vishay siliconix notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings may cause permanen t damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the sp ecifications is not implied. exposure to absolute maximum rating conditions for extended peri ods may affect de vice reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source br eakdown voltage v ds v gs = 0 v, i d = 250 a 30 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.0 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 30 v --1 a v gs = 0 v v ds = 30 v, t j = 125 c --50 v gs = 0 v v ds = 30 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 10 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 6 a - 0.028 0.035 ? v gs = 4.5 v i d = 4.9 a - 0.036 0.052 v gs = 10 v i d = 6 a, t j = 125 c - - 0.054 v gs = 10 v i d = 6 a, t j = 175 c - - 0.064 forward transconductance b g fs v ds = 15 v, i d = 5 a -21-s dynamic b input capacitance c iss v gs = 0 v v ds = 15 v, f = 1 mhz - 295 370 pf output capacitance c oss -6785 reverse transfer capacitance c rss -2535 total gate charge c q g v gs = 10 v v ds = 15 v, i d = 6 a -610 nc gate-source charge c q gs -1.2- gate-drain charge c q gd -1- turn-on delay time c t d(on) v dd = 15 v, r l = 2.5 ? i d ? 6 a, v gen = 10 v, r g = 1 ? -69 ns rise time c t r -1218 turn-off delay time c t d(off) -1320 fall time c t f -812 source-drain diode ratings and characteristics b pulsed current a i sm --31a forward voltage v sd i f = 3 a, v gs = 0 v -0.81.1v
document number: 67934 www.vishay.com s11-0959-rev. a, 06-jun-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sq3456bev vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 5 v v gs = 3 v v gs = 4 v 0 6 12 18 24 30 0.0 1.2 2.4 3.6 4.8 6.0 g f s -tran s conductance ( s ) i d -drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 100 200 300 400 500 0 6 12 18 24 30 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0.00 0.03 0.06 0.09 0.12 0.15 0 8 16 24 32 40 r d s (on) -on-re s i s tance () i d -drain current (a) v gs gs gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) v d s = 15 v i d = 6 a
www.vishay.com document number: 67934 4 s11-0959-rev. a, 06-jun-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sq3456bev vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. j unction temperature on-resistance vs. gate-to-source voltage source-drain diode forward voltage threshold voltage drain source breakdown vs . junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 6 a v gs gs s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -1.0 -0.7 -0.4 -0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 30 32 34 36 38 40 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma
document number: 67934 www.vishay.com s11-0959-rev. a, 06-jun-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sq3456bev vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized th ermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied 100 m s limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 1 s , 10 s , dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja = 110 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. surface mounted p dm
www.vishay.com document number: 67934 6 s11-0959-rev. a, 06-jun-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sq3456bev vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-foot (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062", double sided with 2 oz . copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufa cturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67934 . 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 normalized effective tran s ient thermal impedance sq uare wave pul s e duration ( s ) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pul s e
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