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| inchange semiconductor product specification silicon pnp power transistors BD132 description ? ? complement to type bd131 ? with to-126 package ? high current (max:- 3a) ? low voltage (max: -45v) applications ? for general purpose power applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -45 v v ceo collector-emitter voltage open base -45 v v ebo emitter -base voltage open collector -4 v i c collector current (dc) -3 a i cm collector current-peak -6 a i bm base current-peak -0.5 a p t total power dissipation t mb ?60 ?? 15 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-a thermal resistance from junction to ambient 100 k/w r th j-mb thermal resistance from junction to mounting base 6 k/w
inchange semiconductor product specification 2 silicon pnp power transistors BD132 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat-1 collector-emitter saturation voltage i c =-0.5a; i b =-50ma -0.3 v v cesat-2 collector-emitter saturation voltage i c =-2a; i b =-0.2a -0.7 v v besat-1 base-emitter saturation voltage i c =-0.5a; i b =-50ma -1.2 v v besat-2 base-emitter saturation voltage i c =-2a; i b =-0.2a -1.5 v v cb =-50v; i e =0 -50 na i cbo collector cut-off current v cb =-50v; i e =0 t j =150 ?? -10 | a i ebo emitter cut-off current v eb =-5v; i c =0 -50 na h fe-1 dc current gain i c =-0.5a ; v ce =-12v 40 h fe-2 dc current gain i c =-2a ; v ce =-1v 20 f t transition frequency i c =-0.25a; v ce =-5v ;f=100mhz 60 mhz inchange semiconductor product specification 3 silicon pnp power transistors BD132 package outline fig.2 outline dimensions |
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