CPDV5-3V3UP-HF features -iec61000-4-2 (esd) kv(contact),20kv(air). -w orking voltage: 3.3v -low leakage current. -low operating and clamping voltages. mechanical data -case: sot -353 standard package ,molded plastic. -t erminals: gold plated, solderable per mil-std-750,method 2026. -mounting position: any -w eight: 0.0070 gram (approx.). circuit diagram 15 maximum ratings (at t a =25c unless otherwise noted) electrical characteristic s (at t a =25c unless otherwise noted) kv a w 20 5 40 v esd i pp p pp o c -55 to +125 -55 to +125 t j operating temperature esd per iec 61000-4-2(air) peak pulse current ( tp = 8/20 us) peak pulse power ( tp = 8/20 us) parameter symbol v alue unit esd per iec 61000-4-2(contact) storage temperature t stg 15 o c v v 3.3 v pt v r wm punch-through voltage reverse stand-off voltage parameter conditions symbol min t yp ma x unit i pt = 2ua snap-back voltage i sb = 50ma v sb reverse leakage current v r wm = 3.3v v i r 2.8 clamping voltage i pp = 1 a, tp=8/20us v c v 0.5 0.05 3.5 5.5 ua i pp = 5 a, tp=8/20us v c v 8.0 i ppr = 1 a, tp=8/20us v cr v 2.4 reverse clamping voltage junction capacitance v r = 0 v , f = 1mhz c j pf 16 12 page 1 comchip t echnology co., l td. rev :a qw -jp023 1 2 3 5 4 d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) s o t - 3 5 3 0.087(2.20) 0.079(2.00) 0.053(1.35) 0.045(1.15) 0.055(1.40) 0.047(1.20) 0.039(1.00) 0.035(0.90) 0.014(0.35) 0.006(0.15) 0.004(0.10)max 0.010(0.26) 0.096(2.45) 0.085(2.15) 0.006(0.15) 0.003(0.08) smd esd protection diode rohs device halogen free
page 2 comchip t echnology co., l td. ra ting and characteristic cur ves (CPDV5-3V3UP-HF) fig.2 - power rating derating curve p o w e r r a t i n g ( % ) 0 ambient temperature ( ) o c 0 1 0 0 5 0 2 5 1 2 5 7 5 1 5 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 1 1 0 fig.1 - non-repetitive max. peak pulse power vs. pulse time m a x . p e a k p u l s e p o w e r - p p p ( k w ) pulse duration-tp(us) 0 . 1 1 1 0 1 0 0 0 . 1 1 0 . 0 1 1 0 0 0 fig.3 - clamping voltage vs. peak pulse current c l a m p i n g v o l t a g e ( v ) peak pulse current(a) 0 0 1 2 3 4 5 6 1 6 1 4 1 2 1 0 8 6 4 2 w aveform parameters: tr=8us td=20us fig.4 - forward voltage vs. forward current f o r w a r d v o l t a g e ( v ) forward current(a) 0 0 1 2 3 4 5 6 1 2 1 0 8 6 4 2 w aveform parameters: tr=8us td=20us qw -jp023 rev :a fig.5 - junction capacitance vs. reverse voltage reverse voltage (v) n o r m a l i z e d c a p a c i t a n c e - c j ( p f ) 0 1 2 3 4 0 4 8 1 2 1 6 2 0 smd esd protection diode
page 3 comchip t echnology co., l td. qw -jp023 rev :a b c d d d 2 d 1 s o t - 3 5 3 s y m b o l a ( m m ) ( i n c h ) 2 . 1 4 2 0 . 0 1 6 4 . 0 0 0 . 1 0 1 . 5 0 + 0 . 1 0 5 4 . 4 0 0 . 4 0 1 3 . 0 0 . 2 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 1 7 8 1 . 0 0 0 . 0 5 9 0 . 0 0 4 + 7 . 0 0 8 0 . 0 3 9 0 . 5 1 2 0 . 0 0 8 s y m b o l ( m m ) ( i n c h ) 0 . 1 5 8 0 . 0 0 4 0 . 1 5 8 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 3 . 5 0 0 . 0 5 0 . 1 3 8 0 . 0 0 2 s o t - 3 5 3 2 . 2 5 0 . 1 0 0 . 0 8 9 0 . 0 0 4 2 . 5 5 0 . 1 0 0 . 1 0 0 0 . 0 0 4 1 . 2 0 0 . 1 0 0 . 0 4 7 0 . 0 0 4 9 . 5 0 1 . 0 0 0 . 3 7 4 0 . 0 3 9 8 . 0 0 0 . 3 0 / + C 0 . 1 0 0 . 3 1 5 0 . 0 1 2 / + C 0 . 0 0 4 smd esd protection diode o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start d 1 d 2 d w 1 t c direction of feed reel t aping specification i n d e x h o l e d e f b w p p 0 p 1 a
page 4 comchip t echnology co., l td. qw -jp023 rev :a marking code e3v3 . 1 2 3 5 4 CPDV5-3V3UP-HF e3v3 size (inch) 0.031 (mm) 0.80 0.35 1.30 0.014 0.051 1.94 0.076 e 2.74 0.108 b c d a sot -353 suggested p ad layout smd esd protection diode part number marking code a d c b e standard packaging c a s e t y p e 3 , 0 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k s o t - 3 5 3
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