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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3527 description low collector saturation voltage high collector current good linearity of h fe applications designed for switching regulator and high voltage switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 25 a i b b base current-continuous 6 a collector power dissipation @ t c =25 100 p c collector power dissipation @ t a =25 3 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3527 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.5a; l= 25mh 400 v v ce (sat) collector-emitter saturation voltage i c = 7a; i b = 1.4a b 1.0 v v be (sat) base-emitter saturation voltage i c = 7a; i b = 1.4a b 1.5 v i cbo collector cutoff current v cb = 500v; i e = 0 100 a i ebo emitter cutoff current v eb = 7v; i c = 0 100 a h fe-1 dc current gain i c = 2a; v ce = 5v 15 h fe-2 dc current gain i c = 7a; v ce = 5v 10 f t current-gain?bandwidth product i c = 1a; v ce = 10v; f= 1mhz 15 mhz switching times t on turn-on time 1.0 s t stg storage time 2.5 s t f fall time i c = 7a; i b1 = 1.4a, i b2 = -1.4a; v cc = 125v 1.0 s isc website www.iscsemi.cn 2 |
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