TN0601L, vn0606l, vn66afd vishay siliconix document number: 70201 s-00591erev. d, 03-apr-00 www.siliconix.com faxback 408-970-5600 11-1 n-channel enhancement-mode mosfet transistors part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) TN0601L 60 1.8 @ v gs = 10 v 0.5 to 2 0.47 vn0606l 60 3 @ v gs = 10 v 0.8 to 2 0.33 vn66afd 3 @ v gs = 10 v 0.8 to 2.5 1.46 low on-resistance: 1.2 low threshold: <1.6 v low input capacitance: 35 pf fast switching speed: 9 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems solid-state relays top view to-226aa (to-92) s d g 1 2 3 to-220sd (tab drain) top view TN0601L vn0606l vn66afd 1 s d g 2 3
parameter symbol TN0601L vn0606l vn66afd b unit drain-source voltage v ds 60 60 60 v gate-source voltage v gs 20 30 30 v continuous drain current (t 150 c) t a = 25 c i d 0.47 0.33 1.46 a (t j = 150 c) t a = 100 c i d 0.29 0.21 0.92 a pulsed drain current a i dm 1.5 1.6 3 power dissipation t a = 25 c p d 0.8 0.8 15 w power dissipation t a = 100 c p d 0.32 0.32 6 w maximum junction-to-ambient r thja 156 156 c/w maximum junction-to-case r thjc 8.3 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. b. reference case for all temperature testing.
TN0601L, vn0606l, vn66afd vishay siliconix www.siliconix.com faxback 408-970-5600 11-2 document number: 70201 s-00591erev. d, 03-apr-00
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