high current general purpose transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5569 issue 2 page 1 of 3 BFX34 silicon epitaxial npn transistor high speed, low saturation switch hermetic to39 package screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 120v v ceo collector ? emitter voltage 60v v ebo emitter ? base voltage 6v i b continuous base current 1.0a i c continuous collector current 2a i cm peak repetitive collector current 5a p d total power dissipation at t a = 25c 870mw t c = 25c 5w t j junction temperature range 200c t stg storage temperature range -65 to +200c thermal properties symbols parameters max. unit r ja thermal resistance, junction to ambient 200 c/w r jc thermal resistance, junction to case 35 c/w
high current general purpose transistor BFX34 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5569 issue 2 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. unit v (br)cbo (1) collector-base breakdown voltage i c = 5ma v be = 0 120 v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma i b = 0 60 v ebo (1) emitter - base voltage i e = 1.0ma i c = 0 6 v ce(sat) (1) collector-emitter saturation voltage 0.4 1.0 v be(sat) (1) base-emitter saturation voltage i c = 5a i b = 0.5a 1.3 1.6 v i ces collector cut-off current v ce = 60v v be = 0 0.02 10 i ebo emitter cut-off current v eb = 4v i c = 0 0.05 10 m a i c = 1.0a v ce = 2v 100 i c = 1.5a v ce = 0.6v 75 h fe dc current gain i c = 2a v ce = 2v 40 80 150 - dynamic characteristics i c = 0.5a v ce = 5v f t transition frequency f = 20mhz 70 100 mhz c obo output capacitance v cb = 10v f = 1.0mhz 40 100 c ibo input capacitance v eb = 0.5v f = 1.0mhz 300 500 pf t on turn on time v cc = 20v i c = 0.5a 0.6 t off turn off time i b1 = -i b2 = 50ma 1.2 m s notes notes notes notes (1) pulse width 300us, 2%
high current general purpose transistor BFX34 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5569 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) to 39 (to - 20 5 a d ) metal package underside view underside view underside view underside view pin 1 - emitter pin 2 - base pin 3 - collector
|
