smd type ic www.kexin.com.cn 1 smd type transistors complementary powertrench half-bridge mosfet KDS4501H features n-channel 9.3a,30v r ds(on) = 18m @v gs =10v r ds(on) = 23m @v gs =4.5v p-channel -5.6 a, -20 v r ds(on) =46m @v gs =- 4.5 v r ds(on) =63m @v gs =-2.5v absolute maximum ratings ta = 25 parameter symbol n-channel p- channel unit drain to source voltage v dss 30 -20 v gate to source voltage v gs 20 8 v drain current continuous (note 1a) 9.3 -5.6 a drain current pulsed 20 -20 a power dissipation for single operation (note 1a) (note 1b) (note 1c) operating and storage temperature t j ,t stg thermal resistance junction to ambient (note 1a) r ja /w thermal resistance junction to case (note 1) r jc /w w 1.2 1 -55to150 50 25 i d 2.5 p d
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit v gs =0v,i d = 250 a n-ch 30 v gs =0v,i d = -250 a p-ch -20 i d = 250 a, referenced to 25 n-ch 24 i d = -250 a, referenced to 25 p-ch -13 v ds = 24v, v gs =0v n-ch 1 v ds =-16v,v gs =0v p-ch -1 v gs = 20v, v ds =0v n-ch 100 v gs = 8v,v ds =0v p-ch 100 v ds =v gs ,i d = 250 a n-ch 1 1.6 3 v ds =v gs ,i d = -250 a p-ch -0.4 -0.7 -1.5 i d = 250 a, referenced to 25 n-ch -4 i d = -250 a, referenced to 25 p-ch 3 v gs =10v,i d =9.3a 14 18 v gs =10v,i d =9.3a,t j = 125 21 29 v gs =4.5v,i d =7.6 a 17 23 v gs =-4.5v,i d =-5.6 a 36 46 v gs =-4.5v,i d =-5.6 a,t j = 125 49 80 v gs =-2.5v,i d =-5.0a 47 63 v gs =10v,v ds =5v n-ch 20 v gs =-4.5v,v ds =-5v p-ch -20 v ds =5v,i d =9.3a n-ch 28 v ds =5v,i d = -5.6a p-ch 16 n-ch 1958 p-ch 1312 n-ch 424 v ds =10v,v gs = 0 v,f = 1.0 mhz p-ch 240 n-ch 182 p-ch 106 n-channel n-ch 15 27 v dd =15v,i d = 1 a, p-ch 15 27 v gs =10v,r gen =6 (note 2) n-ch 5 10 p-ch 15 27 p-channel n-ch 38 61 v dd =-10v,i d =-1a, p-ch 40 64 v gs =-4.5v,r gen =6 (note 2) n-ch 10 20 p-ch 25 40 n-channel n-ch 17 27 v ds =15v,i d =9.3a,v gs =4.5v(note 2) p-ch 13 21 n-ch 4 p-channel p-ch 2.5 v ds =-15v,i d =-2.4a,v gs =-4.5v(note 2) n-ch 5 p-ch 2.0 v gs(th) gate threshold voltage n-ch b vdss drain-source breakdown voltage breakdown voltage temperature coefficient gate-body leakage i gss i dss zero gate voltage drain current g fs forward transconductance gate threshold voltage temperature coefficient r ds(on) static drain-source on-resistance i d(on) on-state drain current r ds(on) static drain-source on-resistance c iss c oss c rss input capacitance output capacitance reverse transfer capacitance t d(on) turn-on delay time tr turn-on rise time t d(off) turn-off delay time t f turn-off fall time q g total gate charge gate-source charge q gs q gd gate-drain charge p-ch v mv/ a na v mv/ m ns ns a s pf nc testconditons ns ns nc nc pf pf KDS4501H
www.kexin.com.cn 3 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit n-ch 2.1 p-ch -2.1 v gs =0v,i s = 2.1a (not 2) n-ch 1.2 v gs =0v,i s = -2.1a (not 2) p-ch -1.2 v sd drain-source diode forward voltage i s maximum continuous drain-source diode forward current a v testconditons KDS4501H
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