MJ900/901/1000/1001 page 1 of 4 comset semiconductors absolute maximum ratings symbol ratings value unit MJ900 mj1000 60 v cbo collector-base voltage MJ901 mj1001 80 vdc MJ900 mj1000 60 v ceo collector-emittervoltage i b =0 MJ901 mj1001 80 vdc v ebo emitter-base voltage MJ900 mj1000 MJ901 mj1001 5.0 vdc i c collector current i c(rms) MJ900 mj1000 MJ901 mj1001 8.0 adc the MJ900, MJ901, mj1000 and mj1001 are silicon epitaxial-bas transistors in monolithic darlington configuration, and are mounted in jedec to-3 metal case. they are intended for use in power linear and switching applications. pnp types are the MJ900 and MJ901, and their complementary npn types are the mj1000 and mj1001 respectively. complementary power darlingtons to-3
MJ900/901/1000/1001 page 2 of 4 comset semiconductors i b base current MJ900 mj1000 MJ901 mj1001 0.1 adc @ t c < 25 90 watts p t power dissipation derate above 25c MJ900 mj1000 MJ901 mj1001 0.515 w/c t j junction temperature t s storage temperature MJ900 mj1000 MJ901 mj1001 -65 to +200 c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case MJ900 mj1000 MJ901 mj1001 1.94 c/w
MJ900/901/1000/1001 page 3 of 4 comset semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit MJ900 mj1000 60 - - v ceo collector-emitter breakdown voltage (*) i c =100 madc, i b =0 MJ901 mj1001 80 - - vdc v ce =30 vdc, i b =0 MJ900 mj1000 -- i ceo collector cutoff current v ce =40 vdc, i b =0 MJ901 mj1001 -- 500 adc i ebo emitter cutoff current v be =5.0 vdc, i c =0 MJ900 mj1000 MJ901 mj1001 --2.0madc v cb =60 v, r be =1.0 k ohm MJ900 mj1000 -- v cb =80 v, r be =1.0 k ohm MJ901 mj1001 -- 1.0 v cb =60 v, r be =1.0 k ohm, t c =150c MJ900 mj1000 -- i cer collector-emitter leakage current v cb =80 v, r be =1.0 k ohm, t c =150c MJ901 mj1001 -- 5.0 madc i c =3.0 a, i b =12 madc MJ900 mj1000 MJ901 mj1001 --2.0 v ce(sat) collector-emitter saturation voltage (*) i c =8.0 a, i b =40 madc MJ900 mj1000 MJ901 mj1001 --4.0 vdc v f forward voltage (pulse method) i f =3 a MJ900 mj1000 MJ901 mj1001 - 1.8 -v v be base-emitter voltage (*) i c =3.0 adc, v ce =3.0vdc MJ900 mj1000 MJ901 mj1001 --2.5v
MJ900/901/1000/1001 page 4 of 4 comset semiconductors v ce =3.0 vdc, i c =3.0 adc MJ900 mj1000 MJ901 mj1001 1000 -- h fe dc current gain (*) v ce =4.0 vdc, i c =3.0 adc MJ900 mj1000 MJ901 mj1001 750 -- - ! ! ! for pnp types current and voltage values are negative ! ! ! (*) pulse width 300 s, duty cycle 2.0% mechanical data dimensions mm a 25,51 b 38,93 c 30,12 d 17,25 e 10,89 g 11,62 h8,54 l1,55 m 19,47 n1 p4,06
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