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savantic semiconductor product specification silicon npn power transistors 2SC3577 d escription with to-3pfa package high breakdown voltage high speed applications for high speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 850 v v ceo collector-emitter voltage open base 650 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a i cm collector current-peak 10 a i b base current 3 a t c =25 80 p c collector power dissipation t a =25 3 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3577 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.5a;l=50mh 650 v v cesat collector-emitter saturation voltage i c =3a ;i b =0.6a 1.5 v v besat base-emitter saturation voltage i c =3a ;i b =0.6a 1.5 v i ces collector cut-off current v cb =800v; v be =0 50 a i ebo emitter cut-off current v eb =7v; i c =0 50 a h fe-1 dc current gain i c =10ma ; v ce =5v 10 h fe-2 dc current gain i c =3a ; v ce =5v 6 f t transition frequency i c =0.5a ; v ce =5v 6 mhz switching times t on turn-on time 1.0 s t stg storage time 2.5 s t f fall time i c =3a; v cc =250v i b1 =0.6a;i b2 =-1.2a 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3577 package outline fig.2 outline dimensions (unindicated tolerance:0.30mm)

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