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IRFF310 n-channel mosfet. v dss = 400v i d = 1.25a r ds(on) = 3.6 ? ? ? ? all semelab hermetically sealed products can be processed in accordance with the requirements of bs, cecc and jan, jantx, jantxv and jans specifications. parameter min. typ. max. units v dss drain ? source breakdown voltage 400 v i d continuous drain current 1.25 a p d power dissipation 15 w r ds(on) static drain ? source on?state resistance 3.6 ? c iss input capacitance 170 pf q g total gate charge 8.4 nc t td(on) turn?on delay time 15 ns t tr rise time 20 ns t td(off) turn?off delay time 35 ns t f fall time 30 ns this is a shortform datasheet. for a full datasheet please contact sales@semelab.co.u k . semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. generated 11-oct-02 to39 (to205af) pinouts 1 ? source 2 ? gate 3 - drain n-channel mosfet in a hermetically sealed to39 metal package. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk dimensions in mm (inches). 0.89 (0.035) max. 12.70 (0.500) min. 4.06 (0.16) 4.57 (0.18) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 5.08 (0.200) typ. 45 1 2 3

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Price & Availability of IRFF310

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRFF310	Infineon Technologies AG	IRFF310 Series 400 V 3.6 Ohm 1.25 A Through Hole Hexfet®Transistor - TO-39	1: USD17.14	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRFF310	International Rectifier			8
IRFF310	New Jersey Semiconductor Products, Inc.		186: USD15.744 140: USD16.247 86: USD16.9843 42: USD17.7216 25: USD18.4608 1: USD19.2	5052

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRFF310	International Rectifier	POWER FIELD-EFFECT TRANSISTOR, 1.35A I(D), 400V, 3.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF	1: USD30.74	5
IRFF310	New Jersey Semiconductor Products Inc	POWER FIELD-EFFECT TRANSISTOR, 1.35A I(D), 400V, 3.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF	953: USD16 456: USD16.8 1: USD20.8	4041

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRFF310	International Rectifier	REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR Power Field-Effect Transistor, 1.25A I(D), 400V, 4.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF		57

Part #	Manufacturer	Description	Price	BuyNow Qty.
IRFF310	Intersil Corporation			110

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