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mrf5s21045nr1 MRF5S21045NBR1 1 rf device data freescale semiconductor rf power field effect transistors n-channel enhancement-mode lateral mosfets designed for w- cdma base station app lications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma an d multicarrier amplifier applications. to be used in class ab for pcn- pcs/cellular radio and wll applications. ? typical 2-carrier w-cdma performance: v dd = 28 volts, i dq = 500 ma, p out = 10 watts avg., f = 2112.5 mhz, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain 14.5 db drain efficiency 25.5% im3 @ 10 mhz offset -37 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset -39 dbc in 3.84 mhz channel bandwidth ? capable of handling 5:1 vswr, @ 28 vdc, 2140 mhz, 45 watts cw output power features ? characterized with series equivalent large-signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? 200 c capable plastic package ? n suffix indicates lead-free terminations. rohs compliant. ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain-source voltage v dss -0.5, +68 vdc gate-source voltage v gs -0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 130 0.74 w w/ c storage temperature range t stg -65 to +150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 45 w cw case temperature 79 c, 10 w cw r jc 1.35 1.48 c/w 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf5s21045n rev. 4.1, 12/2009 freescale semiconductor technical data mrf5s21045nr1 MRF5S21045NBR1 2110-2170 mhz, 10 w avg., 28 v 2 x w-cdma lateral n-channel rf power mosfets case 1484-04, style 1 to-272 wb-4 plastic MRF5S21045NBR1 case 1486-03, style 1 to-270 wb-4 plastic mrf5s21045nr1 ? freescale semiconductor , inc., 2008-2009. all rights reserved.
2 rf device data freescale semiconductor mrf5s21045nr1 MRF5S21045NBR1 table 3. esd protection characteristics test methodology class human body model (per jesd22-a114) 1c (minimum) machine model (per eia/jesd22-a115) a (minimum) charge device model (per jesd22-c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22-a113, ipc/jedec j-std-020 3 260 c table 5. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss 1 adc gate-source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 120 adc) v gs(th) 2 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 500 madc) v gs(q) 2 3.8 5 vdc drain-source on-voltage (v gs = 10 vdc, i d = 1.2 adc) v ds(on) 0.2 0.35 vdc forward transconductance (v ds = 10 vdc, i d = 1.2 adc) g fs 3.2 s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss 0.9 pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 500 ma, p out = 10 w avg., f1 = 2112.5 mhz, f2 = 2122.5 mhz, 2-carrier w-cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 13.5 14.5 16.5 db drain efficiency d 24 25.5 % intermodulation distortion im3 -37 -35 dbc adjacent channel power ratio acpr -39 -37 dbc input return loss irl -12 -9 db 1. part is internally matched both on input and output.
mrf5s21045nr1 MRF5S21045NBR1 3 rf device data freescale semiconductor figure 1. mrf5s21045nr1(nbr1) test circuit schematic z7 0.500 x 1.000 microstrip z8, z13 0.270 x 0.080 microstrip z10 0.789 x 0.080 microstrip z11 0.527 x 0.080 microstrip z12 0.179 x 0.080 microstrip pcb taconic tlx8-0300, 0.030 , r = 2.55 z1, z9 0.250 x 0.080 microstrip z2 0.987 x 0.080 microstrip z3 0.157 x 0.080 microstrip z4 0.375 x 0.080 microstrip z5 0.480 x 1.000 microstrip z6 0.510 x 0.080 microstrip c2 c1 r2 v bias v supply c6 c5 c4 c8 c9 c10 c3 c13 c7 rf output rf input r1 z1 z2 z3 z4 z5 z6 z13 z8 z7 z12 z11 z9 + dut r3 c11 z10 c12 c15 c14 table 6. mrf5s21045nr1(nbr1) test circuit component designations and values part description part number manufacturer c1 220 nf chip capacitor (1812) 1812y224kat avx c2, c3, c7, c12, c13 6.8 pf 100b chip capacitors atc100b6r8ct500xt atc c4, c5, c14, c15 6.8 f chip capacitors (1812) c4532x5r1h685mt tdk c6 220 f, 63 v electrolytic capacitor, radial 2222-136-68221 vishay c8, c10 1 pf 100b chip capacitors atc100b1r0bt500xt atc c9 1.5 pf 100b chip capacitor atc100b1r5bt500xt atc c11 0.5 pf 100b chip capacitor atc100b0r5bt500xt atc r1, r2 10 k , 1/4 w chip resistors crcw12061002fkea vishay r3 10 , 1/4 w chip resistor crcw120610r0fkea vishay
4 rf device data freescale semiconductor mrf5s21045nr1 MRF5S21045NBR1 figure 2. mrf5s21045nr1(nbr1) test circuit component layout cut out area mrf5s21045n rev. 0 r1 r2 c1 c2 c4 c5 c3 r3 c8 c7 c9 c6 c12 c11 c10 c13 c14 c15
mrf5s21045nr1 MRF5S21045NBR1 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) -20 -8 -1 1 -14 -17 irl, input return loss (db) im3 (dbc), acpr (dbc) -22 -10 -13 -16 -19 2220 2060 irl g ps acpr im3 f, frequency (mhz) figure 3. 2-carrier w-cdma broadband performance @ p out = 10 watts 2200 2180 2160 2140 2120 2100 2080 13.4 15.2 15 -44 32 28 24 20 16 -32 -36 -40 f, frequency (mhz) figure 4. 2-carrier w-cdma broadband performance @ p out = 20 watts figure 5. two-t one power gain versus output power figure 6. third order intermodulation distortion versus output power 100 11 17 1 i dq = 800 ma 650 ma p out , output power (watts) pep v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two-tone measurements 15 13 12 10 -40 -1 0 1 p out , output power (watts) pep 10 -2 0 -3 0 100 -60 -5 0 d , drain efficiency (%) d d , drain efficiency (%) g ps , power gain (db) intermodulation distortion (dbc) imd, third order 14.8 14.6 14.4 14.2 14 13.8 13.6 -28 v dd = 28 vdc, p out = 10 w (avg.), i dq = 500 ma 2-carrier w-cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) 2220 2060 2200 2180 2160 2140 2120 2100 2080 13 14.8 -34 46 42 38 34 30 -22 -26 -30 14.4 14.2 14 13.8 13.6 13.4 13.2 -18 14.6 irl g ps acpr im3 d v dd = 28 vdc, p out = 20 w (avg.), i dq = 500 ma 2-carrier w-cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 16 14 500 ma 350 ma 200 ma i dq = 200 ma 650 ma 800 ma 500 ma 350 ma v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two-tone measurements
6 rf device data freescale semiconductor mrf5s21045nr1 MRF5S21045NBR1 typical characteristics figure 7. intermodulation distortion products versus tone spacing 10 -60 -2 5 0.1 7th order two-t one spacing (mhz) v dd = 28 vdc, p out = 45 w (pep), i dq = 500 ma two-tone measurements (f1 + f2)/2 = center frequency of 2140 mhz 5th order 3rd order -3 0 -3 5 -4 0 -4 5 -5 0 -5 5 1 100 imd, intermodulation distortion (dbc) figure 8. pulse cw output power versus input power 40 54 p3db = 48.17 dbm (65.6 w) p in , input power (dbm) v dd = 28 vdc, i dq = 500 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2140 mhz 52 46 42 30 34 32 36 actual ideal p1db = 47.60 dbm (57.5 w) 50 44 48 38 28 p out , output power (dbm) im3 (dbc), acpr (dbc) figure 9. 2-carrier w-cdma acpr, im3, power gain and drain efficiency versus output power 0 p out , output power (watts) avg. 40 -10 -20 30 -30 -40 10 -50 1 10 100 20 v dd = 28 vdc, i dq = 500 ma f1 = 2135 mhz, f2 = 2145 mhz 2 x w-cdma, 10 mhz @ 3.84 mhz bandwidth par = 8.5 db @ 0.01% probability (ccdf) d , drain efficiency (%), g ps , power gain (db) 100 11 17 0.1 0 60 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 500 ma f = 2140 mhz 10 1 16 15 14 13 12 50 40 30 20 10 d , drain efficiency (%) g ps , power gain (db) figure 11. power gain versus output power p out , output power (watts) cw g ps , power gain (db) v dd = 12 v 16 v 80 6 16 050 20 10 8 30 40 12 14 i dq = 500 ma f = 2140 mhz t c = -30 c 25 c im3 d -30 c 85 c 85 c 25 c -30 c 85 c acpr 25 c -30 c 25 c g ps 85 c t c = -30 c -30 c 25 c 85 c 25 c 70 60 10 20 v 24 v 28 v 32 v 85 c
mrf5s21045nr1 MRF5S21045NBR1 7 rf device data freescale semiconductor typical characteristics 210 10 9 90 t j , junction temperature ( c) figure 12. mttf factor versus junction temperature this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 8 10 7 10 6 110 130 160 180 200 mttf factor (hours x amps 2 ) 100 120 140 150 170 190 w-cdma test signal 10 0.0001 100 0 peak-t o-a verage (db) figure 13. ccdf w-cdma 3gpp, test model 1, 64 dpch, 67% clipping, single-carrier test signal 10 1 0.1 0.01 0.001 24 68 figure 14. 2\carrier w\cdma spectrum f, frequency (mhz) 3.84 mhz channel bw -im3 in 3.84 mhz bw +im3 in 3.84 mhz bw -acpr in 3.84 mhz bw +acpr in 3.84 mhz bw probability (%) (db) +20 +30 0 -10 -40 -50 -60 -70 -80 -20 20 515 10 0 -5 -10 -15 -2 0 -25 25 -30 w-cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf
8 rf device data freescale semiconductor mrf5s21045nr1 MRF5S21045NBR1 figure 15. series equivalent source and load impedance f mhz z source z load 2000 2110 2140 4.78 - j5.19 3.81 - j3.69 4.04 - j4.14 8.15 - j5.91 7.07 - j7.32 6.28 - j7.71 v dd = 28 vdc, i dq = 500 ma, p out = 10 w avg. z o = 10 z load f = 2000 mhz f = 2200 mhz z source 2170 2200 3.57 - j3.11 3.69 - j3.39 5.61 - j7.85 4.92 - j7.85 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 2000 mhz f = 2200 mhz
mrf5s21045nr1 MRF5S21045NBR1 9 rf device data freescale semiconductor package dimensions
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mrf5s21045nr1 MRF5S21045NBR1 15 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over-molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 4 oct. 2008 ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn12779, p. 1, 2 ? updated part numbers in table 6, component designations and values, to latest rohs compliant part numbers, p. 3 ? replaced case outline 1486-03, issue c, with 1486-03, issue d, p. 9-11. added pin numbers 1 through 4 on sheet 1. ? replaced case outline 1484-04, issue d, with 1484-04, issue e, p. 12-14. added pin numbers 1 through 4 on sheet 1, replacing gate and drain notations with pin 1 and pin 2 designations. ? added product documentation and revision history, p. 15 4.1 dec. 2009 ? corrected data sheet to reflect rf test reduction frequency described in product and process change notification number, pcn12779, p. 2
16 rf device data freescale semiconductor mrf5s21045nr1 MRF5S21045NBR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals, must be validated for each customer application by customer's technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor , inc. 2008-2009. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com document nu mber: mrf5s21045n rev. 4.1, 12/2009 rohs-compliant and/or pb-free versions of freescale products have the functionality and electrical characteristics of their non-rohs-compliant and/or non-pb-free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale's environmental products program, go to http://www .freescale.com/epp.

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