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Datasheet File OCR Text: |
savantic semiconductor product specification silicon npn power transistors 2SD717 d escription with to-3p(i) package low collector saturation voltage high collector power dissipation applications high power switching applications dc-dc converter and dc-ac inverter applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 70 v v ceo collector- emitter voltage open base 50 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i b base current 2 a p t total power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(i)) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD717 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ,i b =0 50 v v cesat collector-emitter saturation voltage i c =6a; i b =0.3a 0.4 v v besat base-emitter saturation voltage i c =6a; i b =0.3a 1.2 v i cbo collector cut-off current v cb =70v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =1a ; v ce =1v 70 240 h fe-2 dc current gain i c =6a ; v ce =1v 30 f t transition frequency i c =1a ; v ce =4v 10 mhz c ob output capacitance i e =0 ; v cb =10v ;f=1mhz 350 pf switching times t on turn-on time 0.3 s t s storage time 2.5 s t f fall time i b1 =-i b2 =0.3a;r l =5 a ;v cc =30v 0.4 s h fe-1 classifications o y 70-140 120-240 savantic semiconductor product specification 3 silicon npn power transistors 2SD717 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm) |
Price & Availability of 2SD717
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