SI4450DY vishay siliconix document number: 70144 s-03951?rev. e, 26-may-03 www.vishay.com 2-1 n-channel 60-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 60 0.024 @ v gs = 10 v 7.5 60 0.03 @ v gs = 6.0 v 6.5 so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 d g s n-channel mosfet ordering information: SI4450DY SI4450DY-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 7.5 continuous drain current (t j = 150 c) a t a = 70 c i d 5.5 a pulsed drain current i dm 50 a continuous source current (diode conduction) a i s 2.1 maximum power dissipation a t a = 25 c p d 2.5 w maximum power dissipation a t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit maximum junction-to-ambient a r thja 50 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the w orldwide web: http://www.vishay .com/www/product/spice.htm
SI4450DY vishay siliconix www.vishay.com 2-2 document number: 70144 s-03951?rev. e, 26-may-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 55 c 20 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 20 a drain source on state resistance b r ds( ) v gs = 10 v, i d = 7.5 a 0.020 0.024 drain-source on-state resistance b r ds(on) v gs = 6.0 v, i d = 6.5 a 0.025 0.03 forward transconductance b g fs v ds = 15 v, i d = 7.5 a 18.5 s diode forward voltage b v sd i s = 2.1 a, v gs = 0 v 0.75 1.2 v dynamic total gate charge q g 31 50 gate-source charge q gs v ds = 30 v, v gs = 10 v, i d = 7.5 a 7.7 nc gate-drain charge q gd 8.3 gate resistance r g 1 5.8 turn-on delay time t d(on) 16 30 rise time t r v dd = 30 v, r l = 30 11 20 turn-off delay time t d(off) v dd = 30 v , r l = 30 i d 1 a, v gen = 10 v, r g = 6 41 80 ns fall time t f 21 40 source-drain reverse recovery time t rr i f = 2.1 a, di/dt = 100 a/ s 46 80 notes a. for design aid only; not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
SI4450DY vishay siliconix document number: 70144 s-03951?rev. e, 26-may-03 www.vishay.com 2-3 typical characteristics (25 c unless noted) 0 10 20 30 40 50 0246810 0 2 4 6 8 10 0 7 14 21 28 35 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 25 50 75 100 125 150 0.00 0.01 0.02 0.03 0.04 0.05 0 1020304050 0 400 800 1200 1600 2000 2400 0 102030405060 0 10 20 30 40 50 01234567 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 thru 6 v 5 v 4, 3 v v gs - gate-to-source voltage (v) - drain current (a) i d t c = 125 c -55 c - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs c rss c oss c iss v gs = 30 v i d = 7.5 a - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature v gs = 10 v i d = 7.5 a t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 10 v v gs = 6 v 25 c
SI4450DY vishay siliconix www.vishay.com 2-4 document number: 70144 s-03951?rev. e, 26-may-03 typical characteristics (25 c unless noted) source-drain diode forward v oltage on-resistance vs. gate-to-source voltage threshold v oltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s t j - temperature ( c) time (sec) power (w) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 45678910 - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 t j = 150 c t j = 25 c i d = 7.5 a i d = 250 a variance (v) v gs(th) 20 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 0.01 0.10 1.00 10.00 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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